ICE-IP-338 High-speed XTS-GCM Multi Stream Inline Cipher Engine
Argument for anti-fuse non-volatile memory in 28nm high-K metal gate
Update: Synopsys Expands DesignWare IP Portfolio with Acquisition of Kilopass Technology (Jan. 10, 2018)
Andre Hassan, Kilopass Technology Inc.
EETimes (10/15/2011 1:17 PM EDT)
With 28nm high-K metal Gate (HKMG) semiconductor production ramping in 2012, system-on-chip (SoC) designers are presented with the silicon real estate and economic incentive to integrate more functionality on-chip. One function that continues to be challenging for on-chip integration is non-volatile memory (NVM) despite its many advantages. At smaller process geometries, especially 28nm HKMG, the challenges to integrating NVM such as flash, pseudo flash, and e-fuse are effectively addressed with an anti-fuse solution.
E-mail This Article | Printer-Friendly Page |
|
Related Articles
- The benefit of non-volatile memory (NVM) for edge AI
- Anti-fuse memory provides robust, secure NVM option
- The Answer to Non-Volatile Memory Security Issues at Advanced Nodes: Go Volatile!
- Improving reliability of non-volatile memory systems
- Achieving High Performance Non-Volatile Memory Access Through "Execute-In-Place" Feature
New Articles
- Accelerating RISC-V development with Tessent UltraSight-V
- Automotive Ethernet Security Using MACsec
- What is JESD204C? A quick glance at the standard
- Optimizing Power Efficiency in SOC with PVT Sensor-Assisted DVFS Technology
- Bandgap Reference (BGR) Circuit Design and Transient Analysis in 90nm VLSI Technology
Most Popular
- System Verilog Assertions Simplified
- Accelerating RISC-V development with Tessent UltraSight-V
- System Verilog Macro: A Powerful Feature for Design Verification Projects
- Understanding Logic Equivalence Check (LEC) Flow and Its Challenges and Proposed Solution
- Design Rule Checks (DRC) - A Practical View for 28nm Technology