Bluetooth low energy v6.0 Baseband Controller, Protocol Software Stack and Profiles IP
The Era of 20 nm Systems Approaches
By Ron Wilson, Editor-in-Chief, Altera Corporation
Perhaps no semiconductor process has generated more controversy—before a single product has been shipped—than the 20 nm node. There was argument over whether the node would have to wait for production-ready EUV lithography. It did not: double-patterning, though expensive and restrictive on layout, has met the needs of the finest-resolution mask layers.
There were battles over whether the node would require finFET transistors. Intel, IBM, and UMC say yes; Samsung, TSMC, and GLOBALFOUNDRIES say no. TSMC has since equivocated a bit, pulling forward plans for a 16 nm finFET half-node. Perhaps most notoriously, NVIDIA CEO Jen-Hsun Huang publicly questioned the economic viability of the whole 20 nm node, saying that its cost per transistor might never drop below that of 28 nm.
E-mail This Article | Printer-Friendly Page |
|
Altera Hot IP
Related Articles
- DRC debugging challenges in AMS/custom designs at 20 nm
- A new era for embedded memory
- Ensure Cybersecurity in the Connected Vehicles Era With ISO/SAE 21434
- Embracing a More Secure Era with TLS 1.3
- Enhancing VLSI Design Efficiency: Tackling Congestion and Shorts with Practical Approaches and PnR Tool (ICC2)
New Articles
- Accelerating RISC-V development with Tessent UltraSight-V
- Automotive Ethernet Security Using MACsec
- What is JESD204C? A quick glance at the standard
- Optimizing Power Efficiency in SOC with PVT Sensor-Assisted DVFS Technology
- Bandgap Reference (BGR) Circuit Design and Transient Analysis in 90nm VLSI Technology
Most Popular
- System Verilog Assertions Simplified
- Accelerating RISC-V development with Tessent UltraSight-V
- System Verilog Macro: A Powerful Feature for Design Verification Projects
- Understanding Logic Equivalence Check (LEC) Flow and Its Challenges and Proposed Solution
- Design Rule Checks (DRC) - A Practical View for 28nm Technology