English
Samsung Electronics First to Mass Produce 667 Mbps DDR2 Memory
San Jose, CA - July 12, 2005: Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing 667 Mbps DDR2 (Double Data Rate 2) DRAM memory. Designed for faster data transfer in desktop and notebook PCs, workstations and servers, DDR2-667 has 25 percent greater bandwidth than the fastest main memory available today.
The new Samsung DDR2-667 Mbps device will optimize performance in both single-core and new dual-core processors.
“We’ve been the clear leader in state-of-the-art, DDR2 solutions, having delivered hundreds of millions of DDR2 components since we initiated volume shipments last April,”said Tom Quinn, senior vice president, memory sales and marketing, Samsung Semiconductor.“We’re driving the production of our 667 Mbps devices using our 90 nanometer process technology on 300mm wafers.”
In addition to increased system performance, DDR2-667 also will provide additional benefit to the notebook market because it offers 30 percent less power consumption than DDR400.
Samsung’s DDR2-667 is available now in 256Mb and 512Mb versions. A 1 Gb version is expected late this year.
Late last year, research analyst iSuppli Corporation projected that the DDR2 market will grow from 35 percent of total DRAM production this year to 68 percent in 2006.
About Samsung Electronics
Samsung Electronics Co. Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2004 parent company sales of US$55.2 billion and net income of US$10.3 billion. Employing approximately 113,000 people in over 90 offices in 48 countries, the company consists of five main business units: Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is the world’s largest producer of color monitors, color TVs, memory chips and TFT-LCDs. For more information, please visit www.samsung.com.
The new Samsung DDR2-667 Mbps device will optimize performance in both single-core and new dual-core processors.
“We’ve been the clear leader in state-of-the-art, DDR2 solutions, having delivered hundreds of millions of DDR2 components since we initiated volume shipments last April,”said Tom Quinn, senior vice president, memory sales and marketing, Samsung Semiconductor.“We’re driving the production of our 667 Mbps devices using our 90 nanometer process technology on 300mm wafers.”
In addition to increased system performance, DDR2-667 also will provide additional benefit to the notebook market because it offers 30 percent less power consumption than DDR400.
Samsung’s DDR2-667 is available now in 256Mb and 512Mb versions. A 1 Gb version is expected late this year.
Late last year, research analyst iSuppli Corporation projected that the DDR2 market will grow from 35 percent of total DRAM production this year to 68 percent in 2006.
About Samsung Electronics
Samsung Electronics Co. Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2004 parent company sales of US$55.2 billion and net income of US$10.3 billion. Employing approximately 113,000 people in over 90 offices in 48 countries, the company consists of five main business units: Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is the world’s largest producer of color monitors, color TVs, memory chips and TFT-LCDs. For more information, please visit www.samsung.com.
|
||||||
Related News
- Samsung Electronics Begins Volume Production of First 80-nanometer DDR2 Memory
- Samsung Mass Producing Highly Efficient Embedded Multi-Chip Memory for Entry-level Smartphones
- Samsung Electronics Licenses Kilopass' Embedded Non-Volatile Memory Technology for its Foundry Business
- Samsung Electronics and Numonyx join forces on Phase Change Memory
- Hynix Semiconductor, LG Electronics, Samsung Electronics and Silicon Image Sign Long-Term Agreement to Create the Next-Generation Memory Interface Technology Specification
Breaking News
- Arm loses out in Qualcomm court case, wants a re-trial
- Jury is out in the Arm vs Qualcomm trial
- Ceva Seeks To Exploit Synergies in Portfolio with Nano NPU
- Synopsys Responds to U.K. Competition and Markets Authority's Phase 1 Announcement Regarding Ansys Acquisition
- Alphawave Semi Scales UCIe™ to 64 Gbps Enabling >20 Tbps/mm Bandwidth Density for Die-to-Die Chiplet Connectivity
Most Popular
|
E-mail This Article | 
|
|
Printer-Friendly Page |