English
MoSys Inc. Announces Licensing Agreement with YAMAHA Corporation
Targets High-Density Embedded Memory Products for Advanced Multimedia Mobile Phones
SUNNYVALE, Calif.--Feb. 1, 2006--MoSys, Inc. (Nasdaq:MOSY - News), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced today the licensing of MoSys' 1T-SRAM® high-density embedded memory technology by YAMAHA Corporation for high-quality audio processing and playback in advanced mobile phone applications.
"1T-SRAM is a perfect solution for the growing need for high-density embedded memories in our products," said Junji Torii, General Manager of Product Planning Department, Semiconductor Division at YAMAHA Corporation. "Its optimum combination of density, speed and power dissipation allows YAMAHA to continue innovating our lineup of mobile audio LSIs, maintaining our leadership position in terms of performance, quality and cost."
"Mobile phones are turning into a powerful multimedia system, enabling music and video playback as well as radio and television program reception capabilities," said Chet Silvestri, Chief Executive Officer of MoSys, Inc. "YAMAHA Corporation is a major innovator and retains a leading market share in the mobile audio LSIs market. We are very pleased that they have selected our 1T-SRAM technology for their advanced products."
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY - News), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
About YAMAHA Corporation
Information about YAMAHA Corporation is available on YAMAHA' website at http://www.global.yamaha.com.
SUNNYVALE, Calif.--Feb. 1, 2006--MoSys, Inc. (Nasdaq:MOSY - News), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced today the licensing of MoSys' 1T-SRAM® high-density embedded memory technology by YAMAHA Corporation for high-quality audio processing and playback in advanced mobile phone applications.
"1T-SRAM is a perfect solution for the growing need for high-density embedded memories in our products," said Junji Torii, General Manager of Product Planning Department, Semiconductor Division at YAMAHA Corporation. "Its optimum combination of density, speed and power dissipation allows YAMAHA to continue innovating our lineup of mobile audio LSIs, maintaining our leadership position in terms of performance, quality and cost."
"Mobile phones are turning into a powerful multimedia system, enabling music and video playback as well as radio and television program reception capabilities," said Chet Silvestri, Chief Executive Officer of MoSys, Inc. "YAMAHA Corporation is a major innovator and retains a leading market share in the mobile audio LSIs market. We are very pleased that they have selected our 1T-SRAM technology for their advanced products."
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY - News), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 98 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
About YAMAHA Corporation
Information about YAMAHA Corporation is available on YAMAHA' website at http://www.global.yamaha.com.
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