Teknovus Licenses MoSys 1T-SRAM(R) for Their Gigabit Ethernet Passive Optical Network (GEPON) Chip Sets

SUNNYVALE, Calif.--July 25, 2006--MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory solutions, announced today the silicon validation of MoSys' 1T-SRAM(R) embedded memory technology within Teknovus' Optical Network Unit (ONU) chips, used in Fiber-to-the-Home (FTTH) access networks. The multi-megabit, highly integrated devices have been in volume production since June/2006, and are manufactured using MoSys's 1T-Q(R) advanced bit cell technology for its embedded memory on TSMC's 0.13-micron standard CMOS process. The companies also announced the extension of their 1T-SRAM licensing agreement for next generation chip set designs.

"Teknovus leadership in the GEPON chip sets comes by increasing transport capacity, optimizing fiber infrastructure, improving manageability, integrating services functionality, and, finally, reducing the cost of optical access," said David Coakley, Vice President of Operations for Teknovus. "MoSys' 1T-SRAM technology is a key factor in enabling us to deliver the industry's highest level of integration and providing all the features needed for a single-chip."

According to the FTTH Worldwide Market and Technology Forecast (2006-2011) report recently released by Light Reading Inc., the total number of homes worldwide that will be reached by next-generation fiber-optic networks will soar from about 11 million in 2006 to about 86 million in 2011. The main services driving this growth include HDTV, next-generation gaming, personal video and digital photography.

"We are very pleased that Teknovus has chosen to partner with us to provide cost-effective, next-generation home gateway solutions to the emerging and fast growing triple-play services markets in broadband access networks, including IPTV," mentioned Chet Silvestri, Chief Executive Officer of MoSys. "Besides Data Communications and Networking applications like in the Teknovus projects, our CLASSIC Macros program also produced design wins in areas like Portable Data Storage and Computer Peripherals last quarter."

MoSys' CLASSIC Macros are a family of configurable, high density, high speed, low power memory macros using silicon-proven memory cores, targeting pure-play semiconductor wafer foundries. MoSys launched the CLASSIC Memory Macro program in June of 2005 and since then has experienced strong customer acceptance. Just during last calendar quarter, MoSys signed four new CLASSIC macro-licensing agreements -- including extensions with two existing, already in production, customers.

About MoSys Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.