VeriSilicon and MoSys Announce Collaboration to Drive Adoption of 1T-SRAM Embedded Memory Technology for Customer System-on-Chip Designs

SANTA CLARA & SUNNYVALE, Calif.-- November 16, 2006 --VeriSilicon Holdings Co., Ltd. (VeriSilicon), a leading world class ASIC design foundry and semiconductor IP provider, and MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density system-on-chip (SoC) embedded memory solutions, today announced the companies are partnering to further expand the adoption of MoSys’ popular 1T-SRAM technology by providing VeriSilicon customers seamless access to the patented technology.

Under the terms of the partnership, VeriSilicon will add the 1T-SRAM capability to its intellectual property (IP) portfolio offering, for use into customer SoC designs, on multiple foundries.

VeriSilicon is a fabless ASIC design foundry focusing on providing best-in-class vertical platform solutions, system knowledge and services to help SoC customers go from chip specification to production. Under the partnership, customers now have the option to work directly with VeriSilicon to integrate MoSys’ innovative memory technology into their designs across a wide range of foundry options and advanced process geometries, such as 90 nm. By leveraging MoSys’ patented 1T-SRAM ultra high density memory offering, customers are able to significantly lower their silicon costs while maintaining high performance and low power.

“We are very happy to work with VeriSilicon to proliferate our technology to a wider range of customers. Over the last few years, VeriSilicon has garnered numerous industry awards by amassing a successful track record across an impressive world wide customer base. Our expectation is that the combination of our pioneering memory technology and VeriSilicon leading ASIC capabilities will result in uniquely optimal silicon solutions for numerous types of applications,” said Chet Silvestri, chief executive officer of MoSys.

“Our collaboration with MoSys represents VeriSilicon’s commitment to provide customers a one-stop-shop for their IP and turnkey needs. By working with a technology leader like MoSys, our customers can also leverage our other IP products and design services to develop ultra-competitive solutions in terms of silicon area and power to meet their most demanding product requirements,” said Federico Arcelli, Corporate vice-president of WW sales & marketing at VeriSilicon.

About VeriSilicon

VeriSilicon Holdings Co., Ltd. is a leading world class ASIC design foundry providing libraries, semiconductor IPs, design and turnkey manufacturing services with multi-fab capability supporting process technologies down to 90nm. VeriSilicon has achieved first silicon success and entered volume production of many complex, multi-million gates SoCs using the leading wafer foundries in APAC and China. VeriSilicon has operations in US, China, Taiwan, Japan, France, and Korea. Over 500 customers worldwide have licensed VeriSilicon IPs and Standard Design Platforms. In 2005, VeriSilicon was ranked number three in Deloitte Technology Fast 50 China, the top 50 fastest-growing technology companies in China and number six in Deloitte Fast 500 Asia Pacific, the top 500 fastest-growing technology companies in Asia Pacific. VeriSilicon was also named one of the Red Herring 100 Private Companies of Asia, and selected as one of the EE Times 60 Emerging Startups. More information is available at www.verisilicon.com.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip (SoC) designs. MoSys' licensees have shipped more than 100 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.