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MoSys Licenses 1T-SRAM for Advanced 55NM Process Technology to NEC Electronics
Technology to Help Drive New Advances in IC Products for Innovative Consumer, Networking, Graphics Applications
SUNNYVALE, CA -- May 23, 2007 -- MoSys, Inc., the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP), today announced that NEC Electronics (TSE: 6723) has licensed MoSys' 1T-SRAM technology for use in the semiconductor manufacturer's cutting-edge 55-nm process. The combination of Mosys' 1T-SRAM and NEC Electronics' 55-nm embedded DRAM process technology can produce integrated circuit (IC) devices with the low cost and low power consumption characteristics needed to enable next-generation consumer products. The high-speed attributes of the MoSys 1T-SRAM also enables the technology to address high-performance networking and graphics applications.
"The move to 55-nm is further evidence of the rapid scalability of our 1T-SRAM technology. We have been able to continuously scale this technology from 250nm to the current 55nm node. We will continue to rapidly scale to 45nm and beyond," said Chet Silvestri, president and CEO of MoSys. "This scalability ensures our customers will have access to our high density memory technology in the industry's most advanced process technologies. Extending our partnership with NEC Electronics to include 55nm is an important milestone in delivering on this promise."
About MoSys Inc.
Founded in 1991, MoSys develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys patented 1T-SRAM offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. MoSys licensees have shipped more than 110 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered in Silicon Valley with a design center in Korea. More information is available at www.mosys.com.
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