TSMC Reports Foundry's First 32-Nanometer Technology with Functional SRAM
This leading edge technology is optimized for low power, high density and manufacturing margins with optimal process complexity. Low power technology integrated with high density SRAM, low standby transistors, analog and RF functions, and copper and low-k interconnects is ideal for system on chip (SoC) devices targeted in mobile applications. TSMC plans to provide complete digital, analog and RF functions, and high density memory capabilities at 32nm node.
Noteworthy in the announcement is the fact that this is the first 32nm low-power technology that did not have to resort to high-k gate dielectric and metal gates to achieve its performance characteristics. In addition, a 0.15um² high density SRAM cell has been realized by 193nm immersion lithography using double patterning approach.
“With this announcement, TSMC continues to lead the industry by pushing the boundaries of advanced technology,” said Dr. Jack Sun, vice president R&D, TSMC. “The achievement made at 32nm technology node is yet another testimony to our long-term investment and commitment in advanced technology development to help our customers bring their leading-edge products first to market.”
About TSMC
TSMC is the world’s largest dedicated semiconductor foundry, providing the industry’s leading process technology and the foundry industry’s largest portfolio of process-proven libraries, IP, design tools and reference flows. The Company’s total managed capacity in 2006 exceeded seven million (8-inch equivalent) wafers, including capacity from two advanced 12-inch GigaFabs, four eight-inch fabs, one six-inch fab, as well as TSMC’s wholly owned subsidiaries, WaferTech and TSMC (Shanghai), and its joint venture fab, SSMC. TSMC is the first foundry to provide 65nm production capabilities. Its corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC please see http://www.tsmc.com
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