English
TSMC Qualifies New 0.18-Micron Embedded Flash Family
Ideal for power sensitive, automotive and analog applications
Hsin-chu, Taiwan, R.O.C. – March, 31, 2009 - Taiwan Semiconductor Manufacturing Company, Ltd. (TSE: 2330, NYSE: TSM) today announced that it has qualified its new 0.18-micron embedded flash (embFlash) process technology family that targets a wide range of applications. The new family includes a baseline 1.8 to 5 volt standard process, an ultra-low leakage process, and specific automotive-qualified embedded Flash IP.
“This extended featured-rich 0.18-micron embedded flash family demonstrates the emphasis that TSMC places on serving the analog, power sensitive and automotive markets. The breadth of applications that this family targets is unprecedented and reflects the growing market demand for technology that is both broad in scope, yet precise in its application,” said George Liu, director, Mainstream Technology Business.
The baseline 0.18-micron 1.8V/5V embFlash process supports enhanced analog performance and traditional 5 volt I/O interface applications. The true 5 volt I/Os achieve better performance in a smaller footprint than similar 5 volt I/Os built on higher voltage devices. The process features a single low voltage Flash IP that operates fully functions at 1.8 volts. Several Flash IP macros and a customization service are available now. The new process is ideal for large appliance motor controls on refrigerators, washing machines and air conditioners.
The TSMC 0.18-micron Ultra-Low-Leakage (uLL) embFlash process operates at 1.8V and features a 95% leakage reduction compared to the baseline process. Built upon the uLL devices, CPU, standard cell library, and SRAM can save up to 85%, 90%, and 95% standby current respectively compared to the baseline process. A low power Flash IP supports up to 80% lower standby current and 60% lower active current with the Flash IP compiler expected to be available in Q3 this year. The uLL process is particularly suitable for power-sensitive and portable devices. The High-Data-Retention (HDR) member of the 0.18-micron embedded flash family operates at 1.8V/3.3V and has been qualified for automotive quality requirement AEC-Q100. Extensive test methodology has also been developed to meet the stringent automotive ppm requirements in powertrain, security systems, body systems, and infotainment. The TSMC’s 0.18-micron process requires only seven mask layers to implement the embedded flash features and is now ready for production in Fab 3.
About TSMC
TSMC is the world’s largest dedicated semiconductor foundry, providing the industry’s leading process technology and the foundry’s largest portfolio of process-proven libraries, IP, design tools and reference flows. The Company’s total managed capacity in 2008 exceeded 9 million (8-inch equivalent) wafers, including capacity from two advanced 12-inch - GigaFabs ™, four eight-inch fabs, one six-inch fab, as well as TSMC’s wholly owned subsidiaries, WaferTech and TSMC (China), and its joint venture fab, SSMC. TSMC is the first foundry to provide 40nm production capabilities. Its corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC please visit http://www.tsmc.com. About TSMC TSMC is the world’s largest dedicated semiconductor foundry, providing the industry’s leading process technology and the foundry’s largest portfolio of process-proven libraries, IP, design tools and reference flows. The Company’s total managed capacity in 2008 exceeded 9 million (8-inch equivalent) wafers, including capacity from two advanced 12-inch - GigaFabs ™, four eight-inch fabs, one six-inch fab, as well as TSMC’s wholly owned subsidiaries, WaferTech and TSMC (China), and its joint venture fab, SSMC. TSMC is the first foundry to provide 40nm production capabilities. Its corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC please visit http://www.tsmc.com.
Hsin-chu, Taiwan, R.O.C. – March, 31, 2009 - Taiwan Semiconductor Manufacturing Company, Ltd. (TSE: 2330, NYSE: TSM) today announced that it has qualified its new 0.18-micron embedded flash (embFlash) process technology family that targets a wide range of applications. The new family includes a baseline 1.8 to 5 volt standard process, an ultra-low leakage process, and specific automotive-qualified embedded Flash IP.
“This extended featured-rich 0.18-micron embedded flash family demonstrates the emphasis that TSMC places on serving the analog, power sensitive and automotive markets. The breadth of applications that this family targets is unprecedented and reflects the growing market demand for technology that is both broad in scope, yet precise in its application,” said George Liu, director, Mainstream Technology Business.
The baseline 0.18-micron 1.8V/5V embFlash process supports enhanced analog performance and traditional 5 volt I/O interface applications. The true 5 volt I/Os achieve better performance in a smaller footprint than similar 5 volt I/Os built on higher voltage devices. The process features a single low voltage Flash IP that operates fully functions at 1.8 volts. Several Flash IP macros and a customization service are available now. The new process is ideal for large appliance motor controls on refrigerators, washing machines and air conditioners.
The TSMC 0.18-micron Ultra-Low-Leakage (uLL) embFlash process operates at 1.8V and features a 95% leakage reduction compared to the baseline process. Built upon the uLL devices, CPU, standard cell library, and SRAM can save up to 85%, 90%, and 95% standby current respectively compared to the baseline process. A low power Flash IP supports up to 80% lower standby current and 60% lower active current with the Flash IP compiler expected to be available in Q3 this year. The uLL process is particularly suitable for power-sensitive and portable devices. The High-Data-Retention (HDR) member of the 0.18-micron embedded flash family operates at 1.8V/3.3V and has been qualified for automotive quality requirement AEC-Q100. Extensive test methodology has also been developed to meet the stringent automotive ppm requirements in powertrain, security systems, body systems, and infotainment. The TSMC’s 0.18-micron process requires only seven mask layers to implement the embedded flash features and is now ready for production in Fab 3.
About TSMC
TSMC is the world’s largest dedicated semiconductor foundry, providing the industry’s leading process technology and the foundry’s largest portfolio of process-proven libraries, IP, design tools and reference flows. The Company’s total managed capacity in 2008 exceeded 9 million (8-inch equivalent) wafers, including capacity from two advanced 12-inch - GigaFabs ™, four eight-inch fabs, one six-inch fab, as well as TSMC’s wholly owned subsidiaries, WaferTech and TSMC (China), and its joint venture fab, SSMC. TSMC is the first foundry to provide 40nm production capabilities. Its corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC please visit http://www.tsmc.com. About TSMC TSMC is the world’s largest dedicated semiconductor foundry, providing the industry’s leading process technology and the foundry’s largest portfolio of process-proven libraries, IP, design tools and reference flows. The Company’s total managed capacity in 2008 exceeded 9 million (8-inch equivalent) wafers, including capacity from two advanced 12-inch - GigaFabs ™, four eight-inch fabs, one six-inch fab, as well as TSMC’s wholly owned subsidiaries, WaferTech and TSMC (China), and its joint venture fab, SSMC. TSMC is the first foundry to provide 40nm production capabilities. Its corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC please visit http://www.tsmc.com.
|
||||||
Related News
- TSMC Announces 0.18-Micron Automotive Grade Embedded Flash IP
- Matsushita, Tower deploying 0.18-micron embedded flash
- M31 Technology Develops SRAM Compiler IP on TSMC's 28nm Embedded Flash Process Technology Providing High Performance and Low Power Solutions
- M31 high density and low power IP solutions on TSMC 55nm embedded flash technology
- Dolphin Integration first to achieve 0.84 pA per bit in SpRAM at the 90 nm uLL embedded flash process
Breaking News
- Jury is out in the Arm vs Qualcomm trial
- Ceva Seeks To Exploit Synergies in Portfolio with Nano NPU
- Synopsys Responds to U.K. Competition and Markets Authority's Phase 1 Announcement Regarding Ansys Acquisition
- Alphawave Semi Scales UCIe™ to 64 Gbps Enabling >20 Tbps/mm Bandwidth Density for Die-to-Die Chiplet Connectivity
- RaiderChip Hardware NPU adds Falcon-3 LLM to its supported AI models
Most Popular
|
E-mail This Article | 
|
|
Printer-Friendly Page |