English
Intel: 450-mm wafers must wait on 10-nm
Peter Clarke, EETimes
2/28/2011 3:39 PM EST
GRENOBLE, France – The 10-nm process node appears to be the ideal point for the adoption of manufacturing on 450-mm diameter wafers, according Leonard Hobbs, head of research for Intel Ireland. Speaking at the Industry Strategy Symposium here (ISS Europe) he also indicated that the transition could not come sooner and could be pushed later, depending on the efficacy of industry collaboration.
Hobbs portrayed the transition taking place 2015 to 2017.
|
E-mail This Article | 
|
|
Printer-Friendly Page |
Related News
- Intel's 450-mm wafer spend starts in 2013
- Intel Custom Foundry Certifies Synopsys Implementation and Signoff Tools for 10-nm Tri-Gate Process
- Companies Maximize 300mm, 200mm Wafers; Slow Progress on 450mm
- Dresden fab could host 20-nm process, 450-mm wafers
- Could 450-mm wafers play away from the leading edge?
Breaking News
- Breker RISC-V SystemVIP Deployed across 15 Commercial RISC-V Projects for Advanced Core and SoC Verification
- Veriest Solutions Strengthens North American Presence at DVCon US 2025
- Intel in advanced talks to sell Altera to Silverlake
- Logic Fruit Technologies to Showcase Innovations at Embedded World Europe 2025
- S2C Teams Up with Arm, Xylon, and ZC Technology to Drive Software-Defined Vehicle Evolution
Most Popular
- Intel in advanced talks to sell Altera to Silverlake
- Arteris Revolutionizes Semiconductor Design with FlexGen - Smart Network-on-Chip IP Delivering Unprecedented Productivity Improvements and Quality of Results
- RaiderChip NPU for LLM at the Edge supports DeepSeek-R1 reasoning models
- YorChip announces Low latency 100G ULTRA Ethernet ready MAC/PCS IP for Edge AI
- AccelerComm® announces 5G NR NTN Physical Layer Solution that delivers over 6Gbps, 128 beams and 4,096 user connections per chipset