7 µW always on Audio feature extraction with filter banks on TSMC 22nm uLL
TSMC's R&D chief sees 10 years of scaling
DylanMcGrath, EETimes
10/25/2011 2:45 PM EDT
SANTA CLARA, Calif.—The path is clear for continued semiconductor scaling using FinFETs for the next decade, down to the 7-nm node, according to Shang-Yi Chiang, senior vice president of R&D at foundry giant Taiwan Semiconductor Manufacturing Co.
Beyond 7-nm, the most pressing challenges to continued scaling will come from economics, not technology, Chiang said in a keynote address at the ARM TechCon event here Tuesday (Oct. 25).
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |
|
Related News
- Intel's Bohr sees at least 10 more years of scaling
- Floadia Completes eFlash IP Qualification on TSMC 130BCD plus Process and Achieves the World's Highest Data Retention for 10 Years at 200°C
- Semiconductor Leaders' Marketshares Swell Over the Past 10 Years
- Semiconductor Leaders' Marketshares Surge Over the Past 10 Years
- Top 10 Semiconductor R&D Spenders Increase Outlays 6% in 2017
Breaking News
- Breker RISC-V SystemVIP Deployed across 15 Commercial RISC-V Projects for Advanced Core and SoC Verification
- Veriest Solutions Strengthens North American Presence at DVCon US 2025
- Intel in advanced talks to sell Altera to Silverlake
- Logic Fruit Technologies to Showcase Innovations at Embedded World Europe 2025
- S2C Teams Up with Arm, Xylon, and ZC Technology to Drive Software-Defined Vehicle Evolution
Most Popular
- Intel in advanced talks to sell Altera to Silverlake
- Arteris Revolutionizes Semiconductor Design with FlexGen - Smart Network-on-Chip IP Delivering Unprecedented Productivity Improvements and Quality of Results
- RaiderChip NPU for LLM at the Edge supports DeepSeek-R1 reasoning models
- YorChip announces Low latency 100G ULTRA Ethernet ready MAC/PCS IP for Edge AI
- AccelerComm® announces 5G NR NTN Physical Layer Solution that delivers over 6Gbps, 128 beams and 4,096 user connections per chipset