7 µW always on Audio feature extraction with filter banks on TSMC 22nm uLL
TSMC Unveils Nexsys™ -- the Technology for SoC
90-Nanometer Technology provides Industry-Leading System-on-Chip Integration and Performance
HSIN-CHU, Taiwan, April 10, 2002 – Taiwan Semiconductor Manufacturing Company (TSMC) today unveiled Nexsys – the industry's next-generation technology for system-on-chip (SoC) semiconductor design and manufacturing. Nexsys design rules and SPICE models are available now to select customers. TSMC's Nexsys technology consists not only of process technology, but a design environment and associated intellectual property (IP) and libraries. TSMC expects to begin first production of Nexsys-based 90-namometer customer devices on 200mm wafers in the third quarter of 2002, followed by 300mm wafers beginning in the first quarter of 2003.
"Nexsys is the industry's leading technology for the SoC era," said Dr. Kenneth Kin, senior vice president of worldwide marketing and sales for TSMC. "The first available Nexsys technology features 90-nanometer design rules, electrical and transistor characteristics and performance requirements, collaboratively defined with leading IDM and fabless companies worldwide. Nexsys provides designers with the density, performance and time-to-market advantages necessary to empower innovative new products and applications that will redefine IC industry markets."
On March 5 of this year, TSMC announced that it had successfully produced the foundry industry's first fully functional SRAM chips using 90-nanometer logic process technology. That milestone made TSMC the first foundry to deliver a functional 90-nanometer device, one year ahead of the SIA Roadmap. The device featured a 65-nanometer gate length, roughly 1,000 times thinner than a human hair.
At this geometry, designers will be able to pack several million logic gates into a single chip, or populate the chip with multiple functional blocks, including mixed-signal blocks, embedded high-density memory, or embedded flash, to enable entire systems on a single chip. Process options include a general-purpose version (CLN90G), a high speed version (CLN90HS) and a low-power version (CLN90LP) for computer, graphics, consumer, network, and wireless applications. A mixed-signal/RF CMOS version (CMN90) will also be provided for high-performance analog applications, such as high-bandwidth networks. The high-speed versions of the process will support operating speeds in the multi-Gigahertz range.
The Nexsys 90nm process technology offers a triple-gate-oxide option for design versatility and is expected to have a core voltage as low as 1.0 volts, a gate length of 45-to-65 nanometers, and a gate delay as low as 7.9 picoseconds for the high-speed process option. The process also features low-K dielectric of 2.9 or lower, and up to 10 layers of dual-damascene copper metalization. It is produced using the state-of-the-art scanning lithography systems with optical proximity correction (OPC) and phase-shift masks (PSM).
Nexsys is supported by a broad portfolio of value-added libraries, intellectual property, electronic design automation (EDA) tools and design services. A number of design centers worldwide have already received preliminary design rules, allowing these highly specialized design teams to support IDM and fabless semiconductor customers with process-specific engineering abilities.
Nexsys was introduced today at TSMC's US Technology Symposium at the McEnery Convention Center in San Jose. Additional Symposiums will be held on April 11 in Austin, TX; April 16 in Boston, MA; and April 18 in Orange County, CA. To register for the symposium, please go to www.tsmc.com and click on the Technology Symposium button.
About TSMC
TSMC is the world's largest dedicated semiconductor foundry, providing the industry's leading process technology and the foundry industry's largest portfolio of process-proven library, IP, design tools and reference flows. The company has one advanced 300mm wafer fab in production and one under construction, in addition to six eight-inch fabs and one six-inch wafer fabs. TSMC also has substantial capacity commitments at two joint ventures fabs (Vanguard and SSMC) and at its wholly-owned subsidiary, WaferTech. In early 2001, TSMC became the first IC manufacturer to announce a 90-nanometer technology alignment program with its customers. TSMC's corporate headquarters are in Hsin-Chu, Taiwan. For more information about TSMC please go to http://www.tsmc.com.
Related News
- TSMC Unveils Nexsys 65nm Process Technology Plans; Company Gears its Industry-Leading Fabs for First Customer Products by End of 2005
- Exostiv Labs Unveils AMD Versal Adaptive SoC Device Support for Exostiv and Exostiv Blade Platforms
- Renesas Unveils Industry's First Automotive Multi-Domain SoC Built with 3-nm Process Technology
- Faraday Unveils HiSpeedKit™-HS Platform for High-speed Interface IP Verification in SoCs
- Secure-IC unveils its Securyzr™ neo Core Platform at Embedded World North America 2024
Breaking News
- Andes Technology and proteanTecs Partner to Bring Performance and Reliability Monitoring to RISC-V Cores
- Arteris Releases the Latest Generation of Magillem Registers to Automate Semiconductor Hardware/Software Integration
- Imagination takes efficiency up a level with latest D-Series GPU IP
- Q.ANT and IMS CHIPS Launch Production of High-Performance AI Chips, Establish Blueprint for Strengthening Chip Sovereignty
- sureCore PowerMiser IP enables KU Leuven chip for AI applications to achieve dynamic power saving of greater than 40%
Most Popular
- Intel in advanced talks to sell Altera to Silverlake
- ZeroPoint Technologies Unveils Groundbreaking Compression Solution to Increase Foundational Model Addressable Memory by 50%
- AheadComputing Raises $21.5M Seed Round and Introduces Breakthrough Microprocessor Architecture Designed for Next Era of General-Purpose Computing
- Cortus MINERVA Out-of-Order 4GHz 64-bit RISC-V Processor Platform targets automotive applications
- Siemens delivers certified and automated design flows for TSMC 3DFabric technologies
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |