English
ICE-IP-338 High-speed XTS-GCM Multi Stream Inline Cipher Engine
Samsung begins building China fab
EETimes (9/12/2012 5:30 AM EDT)
LONDON – South Korean electronics giant Samsung Electronics Co. Ltd. has broken ground on a wafer fab for NAND memory production in Xian, in northwestern China.
Initially Samsung is investing $2.3 billion to bring the Xian fab into operation in 2014, as part of a planned total investment of $7 billion. Samsung did not indicate the manufacturing capacity it expects to achieve at various times in the wafer fabs development.
|
E-mail This Article | 
|
|
Printer-Friendly Page |
|
||||||
Related News
- Korean prosecutors name ex-Samsung exec who tried to set up copy-cat fab in China and the Taiwanese backer
- Exec tried to set up copy-cat Samsung fab in China
- Samsung to Invest $7 Billion in China Fab
- Samsung Slows Opening of Texas Fab Despite CHIPS Stimulus
- Huawei rumoured to be building secret fab stable
Breaking News
- Cadence to Acquire Secure-IC, a Leader in Embedded Security IP
- Blue Cheetah Tapes Out Its High-Performance Chiplet Interconnect IP on Samsung Foundry SF4X
- Alphawave Semi to Lead Chiplet Innovation, Showcase Advanced Technologies at Chiplet Summit
- YorChip announces patent-pending Universal PHY for Open Chiplets
- PQShield announces participation in NEDO program to implement post-quantum cryptography across Japan
Most Popular
- Qualitas Semiconductor Signs IP Licensing Agreement with Edge AI Leader Ambarella
- BrainChip Provides Low-Power Neuromorphic Processing for Quantum Ventura's Cyberthreat Intelligence Tool
- Altera Launches New Partner Program to Accelerate FPGA Solutions Development
- Alchip Opens 3DIC ASIC Design Services
- Electronic System Design Industry Posts $5.1 Billion in Revenue in Q3 2024, ESD Alliance Reports