Samsung begins building China fab
EETimes (9/12/2012 5:30 AM EDT)
LONDON – South Korean electronics giant Samsung Electronics Co. Ltd. has broken ground on a wafer fab for NAND memory production in Xian, in northwestern China.
Initially Samsung is investing $2.3 billion to bring the Xian fab into operation in 2014, as part of a planned total investment of $7 billion. Samsung did not indicate the manufacturing capacity it expects to achieve at various times in the wafer fabs development.
E-mail This Article | Printer-Friendly Page |
|
Related News
- Korean prosecutors name ex-Samsung exec who tried to set up copy-cat fab in China and the Taiwanese backer
- Exec tried to set up copy-cat Samsung fab in China
- Samsung to Invest $7 Billion in China Fab
- Samsung Slows Opening of Texas Fab Despite CHIPS Stimulus
- Huawei rumoured to be building secret fab stable
Breaking News
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers
- Blueshift Memory launches BlueFive processor, accelerating computation by up to 50 times and saving up to 65% energy
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
- CXL Fabless Startup Panmnesia Secures Over $60M in Series A Funding, Aiming to Lead the CXL Switch Silicon Chip and CXL IP
- Cadence Unveils Arm-Based System Chiplet
Most Popular
- Cadence Unveils Arm-Based System Chiplet
- CXL Fabless Startup Panmnesia Secures Over $60M in Series A Funding, Aiming to Lead the CXL Switch Silicon Chip and CXL IP
- Esperanto Technologies and NEC Cooperate on Initiative to Advance Next Generation RISC-V Chips and Software Solutions for HPC
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
- Arteris Selected by GigaDevice for Development in Next-Generation Automotive SoC With Enhanced FuSa Standards