Ultra-low power 32 kHz RC oscillator designed in GlobalFoundries 22FDX
SK Hynix Introduces DDR3L-Reduced Standby for Mobile Solutions
Seoul, September 12, 2012 – SK Hynix (‘the Company’, www.skhynix.com) announced that it has introduced DDR3L-RS(Reduced Standby) DRAM for mobile solutions using its 20nm class technology. This product significantly reduces the standby power consumption.
By using cutting-edge 20nm class technology and efficiently managing standby current, this DDR3L-RS product reduces 70% of standby power compared to existing DDR3L DRAM while it maintains DDR3L performance. DDR3L DRAM which has recently gone mainstream works at 1.35V, while DDR3 DRAM does at 1.5V.
This product is available in both chip and module types. Chips for on-board use enable thinner devices to implement various densities with 2Gb(gigabit), 4Gb and 8Gb. SO-DIMMs(Small Outline Dual Inline Memory Module) are also provided with densities of 2GB(gigabyte), 4GB and 8GB.
The DDR3L-RS is expected to evolve into the best memory solution in the Ultrabook™ and tablet PC markets which highly require mobility and low power figure. The product is especially price competitive than LPDDR3 and significantly reduces standby current than existing DDR3L. As it combines performances of mobile DRAM and PC DRAM, SK Hynix expects to penetrate into the new market including low to mid-end ultabooks and tablets with this intermediary product and lead the mobile market.
“With the release of the new DDR3L-RS DRAM, we are now able to provide price competitive and low power products to the customers and these products will open a new area of memory semiconductor as one of the best memory solutions for the low to mid-end market,” said Mr. Ji Bum Kim, Head of Worldwide Marketing & Sales Division of SK Hynix.
According to market research firm iSuppli, the portion of the ultrathin shipments in the laptop market is expected to be 11% in 2012 and will eventually be expanded up to 39% in 2014. In 2015, it will jump to the half of the lap top market with 52% share.
About SK Hynix Inc.
SK Hynix Inc., Korea, is the world’s top tier semiconductor supplier offering Dynamic Random Access Memory chips (“DRAM”), Flash memory chips ("NAND Flash") and CMOS Image Sensors ("CIS") for a wide range of distinguished customers globally. The Company’s shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxemburg Stock Exchange. Further information about SK Hynix is available at www.skhynix.com.
|
Related News
- Cadence Demonstrates Interoperability with SK hynix's Highest Speed LPDDR5T Mobile DRAM at 9600Mbps
- X-Silicon Introduces the World's First Vulkan Driver Implementation for RISC-V, Enabling an entire Ecosystem of 3D Graphics, AI and Compute for Low-Power, Mobile, Edge and IOT Devices
- HBM3 Initially Exclusively Supplied by SK Hynix, Samsung Rallies Fast After AMD Validation, Says TrendForce
- Creonic GmbH Introduces Advanced 5G LDPC Encoder IP core for Enhanced Mobile Broadband Connectivity
- SK hynix's memory chips next in Huawei's 5G phone saga
Breaking News
- VeriSilicon Launches the Industry-Leading Automotive-Grade Intelligent Driving SoC Design Platform
- New Audio Sample Rate Converter (ASRC) IP Core from CAST Offers Versatility with High Fidelity
- NEXT Semiconductor Technologies Collaborates with BAE Systems to Develop Next Generation Space-Qualified Chips
- QuickLogic Delivers eFPGA Hard IP for Intel 18A Based Test Chip
- Premier ASIC and SoC Design Partner Rebrands as Aion Silicon
Most Popular
- QuickLogic Delivers eFPGA Hard IP for Intel 18A Based Test Chip
- BOS Semiconductors to Partner with Intel to Accelerate Automotive AI Innovation
- Baya Systems, Imagination Technologies and Andes Technology to Present on Heterogeneous Compute Architectures at Andes RISC-V CON Silicon Valley
- Crypto Quantique announces QRoot Lite - a lightweight and configurable root-of-trust IP for resource-constrained IoT devices
- TSMC Unveils Next-Generation A14 Process at North America Technology Symposium
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |