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ALTIS Semiconductor Selected as Long Term Foundry Partner for IBM Microelectronics SOI Technology
CORBEIL-ESSONNES, France -- March 15, 2013-- ALTIS Semiconductor, an established global specialty foundry based in France, announced today the finalization of a foundry agreement with IBM Microelectronics. Under the terms of this agreement, ALTIS will be the foundry partner for the IBM 180nm SOI technology. ALTIS will deliver high volume products starting Q2 2013 and will secure capacity increase for 2014 and beyond to address the IBM forecasted demand.
This agreement allows the company to leverage its analog/mixed signal and RF expertise as well as its proven operational excellence and quality focus to serve a long term partner, who is well recognized within the industry for its technology leadership and innovation.
ALTIS has a long term relationship with IBM Microelectronics and has produced many product families for IBM over the past decades. This foundry agreement addresses the next generation of consumer products, including as an example, the RF/SOI chipsets used in the world most advanced mobile devices.
IBM's 7RFSOI technology provides advantage by simultaneously enabling the required level of integration and performance for the large number of switches required in the modern smartphone for example cellular antenna switches, diversity antenna and WLAN.
“We are extremely pleased to expand our strategic relationship with IBM Microelectronics,” said Jean-Paul Beisson, CEO of ALTIS.
"It is another proof that ALTIS is able to provide a competitive solution to worldwide leading customers like IBM and we look forward to this continued collaboration with IBM for many years to come," said Yazid Sabeg, Chairman of ALTIS.
About Altis
Altis Semiconductor is an independent and long-term innovative European based specialty foundry, servicing the growing demand for high quality end-to-end foundry services. The Altis process portfolio encompasses advanced CMOS based technologies for RF, low power, high performance analog mixed signal, non-volatile embedded memory, and high voltage requirements for a broad range of end market applications, including automotive.
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