Dolphin Integration announces the availability of the new generation of SpRAM generator at 90 nm and 55 nm eFlash
Grenoble, France -- February 10, 2014 -- The high density and low power architecture RHEA for SpRAM is now available in the eFlash process variant for the 90 nm and 55 nm nodes.
This SpRAM is designed to reach the highest density and gains from 10 to 20% versus alternative solutions in 90 nm and 55 nm.
Dolphin Integration's RHEA SpRAM RHEA reaches such performances thanks to the data retention mode, which supports a voltage as low as 0.77 V at 55 nm and 90 nm. This minimum voltage retention feature enables to divide leakage by 4 compared to alternative memory generators in stand-by mode.
If you want more information about the:
Or contact Dolphin Integration Library Marketing Manager at ragtime@dolphin.fr
The SpRAM RHEA is part of a complete library portfolio covering
- at 55 nm eF: ultra high-density 6-track standard cells and their kit for islet construction, generators for Dual Port SRAM, via programmable ROM and regulators.
- at 90 nm eF: ultra high-density 6-track standard cells (1.2V +/-10%) and ultra low leakage standard cells (from 1.2V to 3.3V +/-10%) with their kit for islet construction, generators for Dual Port SRAM, one port and two port register file, via programmable ROM and linear regulators.
This panoply for eFlash process is completed by a unique cache controller, which allows to upgrade to 3 times faster and 3 times lesser power consumption compared to a stand alone eFlash memory.
About Dolphin Integration
Dolphin Integration contribute to "enabling mixed signal Systems-on-Chip". Their focus is to supply worldwide customers with fault-free, high-yield and reliable kits of CMOS Virtual Components of Silicon IP, based on innovative libraries of standard cells, flexible registers and low-power memories. They provide high-resolution converters for audio and measurement, regulators for efficient power supply networks, application optimized micro-controllers.
They put emphasis on resilience to noise and drastic reductions of power-consumption at system level, thanks to their own EDA solutions missing on the market for Application Hardware Modeling as well as early Power and Noise assessment. Such diverse experience in ASIC/SoC design and fabrication, plus privileged foundry portal even for small or medium volumes, makes them a genuine one-stop shop covering all customers’ needs for specific requests.
|
Dolphin Semiconductor Hot IP
Related News
- Dolphin Integration announces the availability of the new generation of Foundry Sponsored SpRAM generator at 55 nm
- Dolphin Integration announces the availability of the new generation 28 nm SpRAM generator
- Dolphin Integration announce the availability of new ROM TITAN and ultra low leakage standard cell library SESAME BIV at TSMC 55 nm LP eFlash
- Dolphin Integration announce the availability of the TSMC sponsored sROMet and DpRAM generators at 90 nm LP eFlash
- Dolphin Integration announces the availability of a brand new Front End generator: spRAM Haumea for the 130 nm G process
Breaking News
- JEDEC® and Industry Leaders Collaborate to Release JESD270-4 HBM4 Standard: Advancing Bandwidth, Efficiency, and Capacity for AI and HPC
- BrainChip Gives the Edge to Search and Rescue Operations
- ASML targeted in latest round of US tariffs
- Andes Technology Celebrates 20 Years with New Logo and Headquarters Expansion
- Creonic Unveils Bold Rebrand to Drive Innovation in Communication Technologies
Most Popular
- Cadence to Acquire Arm Artisan Foundation IP Business
- AMD Achieves First TSMC N2 Product Silicon Milestone
- Why Do Hyperscalers Design Their Own CPUs?
- Siemens to accelerate customer time to market with advanced silicon IP through new Alphawave Semi partnership
- New TSN-MACsec IP core for secure data transmission in 5G/6G communication networks
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |