SwitchCore Licenses MoSys' Advanced 1T-SRAM Embedded Memory

Provides higher level of chip integration through high-density embedded memory technology

SUNNYVALE AND LUND, SWEDEN (July 17, 2002) - MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions, today announced that SwitchCore AB has licensed its advanced 1T-SRAMÒ embedded memory technology. SwitchCore's products are key components for high data throughput applications, such as highly integrated switches and routers found in local, metropolitan as well as wide area networks.

"By using Mosys' 1T-SRAM embedded memory, our customers will be able to build more cost-efficient systems," said Tomas Johansson, Product Manager at SwitchCore. "Based on results from our evaluation, we selected the1T-SRAM technology for its unique density without sacrificing first-rate performance and power capabilities - an offering not available from other embedded memory technologies."

"SwitchCore has been a pioneer in Gigabit and Fast Ethernet technology; the most widely used networking technologies to date", noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "With more than 20 million licensed products shipped, SwitchCore gains the benefit of MoSys' unrivaled technology and production experience."

ABOUT MoSys

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys' patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at www.mosys.com .

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Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.

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