English
AMBA Parameter Configurable Multi-Channel DMA Controller (typically 1 to 256)
Samsung Ramps 10nm in 2016
FinFET Roadmap Aligns with TSMC's Plans
Jessica Lipsky, EETimes
5/22/2015 01:50 AM EDT
SAN FRANCISCO -- Samsung announced its next-generation process technology, a 10nm FinFET node, at a company event here. The announcement comes a month after Samsung detailed its 14nm process.
Samsung was shy on specs, but said the process node will be in full production by the end of 2016, about the same time as its rival TSMC. The Samsung 10nm process offers “significant power, area, and performance advantages” and targets a broad range of markets, said foundry senior vice president Hong Hao.
|
E-mail This Article | 
|
|
Printer-Friendly Page |
|
||||||
Related News
- Efinix Partners with Samsung to Develop Quantum eFPGAs on 10nm Silicon Process
- Samsung Starts Mass Production of Its 2nd Generation 10nm FinFET Process Technology
- Cadence DFM Signoff Solutions Achieve Qualification for Samsung 28nm FD-SOI/14nm/10nm Process Technologies
- Rambus Partners with Samsung to Develop 56G SerDes PHY on 10nm LPP Process
- Samsung Completes Qualification of its 2nd Generation 10nm Process Technology
Breaking News
- JEDEC® and Industry Leaders Collaborate to Release JESD270-4 HBM4 Standard: Advancing Bandwidth, Efficiency, and Capacity for AI and HPC
- BrainChip Gives the Edge to Search and Rescue Operations
- ASML targeted in latest round of US tariffs
- Andes Technology Celebrates 20 Years with New Logo and Headquarters Expansion
- Creonic Unveils Bold Rebrand to Drive Innovation in Communication Technologies
Most Popular
- Cadence to Acquire Arm Artisan Foundation IP Business
- AMD Achieves First TSMC N2 Product Silicon Milestone
- Why Do Hyperscalers Design Their Own CPUs?
- Siemens to accelerate customer time to market with advanced silicon IP through new Alphawave Semi partnership
- New TSN-MACsec IP core for secure data transmission in 5G/6G communication networks