IBM Demos III-V FinFETs on Silicon
CMOS Compatible Process for Advanced Nodes
R. Colin Johnson, EETimes
6/18/2015 10:20 PM EDT
PORTLAND, Ore.--The entire semiconductor industry is trying to find a way to exploit the higher electron mobility of indium, gallium and arsenide (InGaAs) without switching from silicon substrates, including the leaders at Intel and Samsung. IBM has demonstrated how to achieve this with standard CMOS processing.
Last month IBM showed a technique of putting III-V compounds of InGaAs onto silicon-on-oxide (SOI) wafers, but now a different research group claims to have found an even better way that uses regular bulk-silicon wafers and have fabricated the InGaAs-on-silicon FinFETs to prove it.
"Starting from a bulk silicon wafer, instead of SOI, we first put down an oxide layer and make a trench through to the silicon below, then grow the indium gallium arsenide from that seed--its a very manufacturable process," Jean Fompeyrine, manager of advanced functional materials told EE Times. Fompeyrine performed the work with Lukas Czornomaz, an advanced CMOS scientist with IBM Research.
E-mail This Article | Printer-Friendly Page |
Related News
Breaking News
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers
- Blueshift Memory launches BlueFive processor, accelerating computation by up to 50 times and saving up to 65% energy
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
- CXL Fabless Startup Panmnesia Secures Over $60M in Series A Funding, Aiming to Lead the CXL Switch Silicon Chip and CXL IP
- Cadence Unveils Arm-Based System Chiplet
Most Popular
- Cadence Unveils Arm-Based System Chiplet
- CXL Fabless Startup Panmnesia Secures Over $60M in Series A Funding, Aiming to Lead the CXL Switch Silicon Chip and CXL IP
- Esperanto Technologies and NEC Cooperate on Initiative to Advance Next Generation RISC-V Chips and Software Solutions for HPC
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
- Arteris Selected by GigaDevice for Development in Next-Generation Automotive SoC With Enhanced FuSa Standards