NEC Introduces High-Performance, Low-Power Embedded DRAM for SoC Design
Standard CMOS-Compatible Embedded DRAM Process Enables Easy Integration of Hard Cores or Soft Macros
TOKYO, SANTA CLARA, Calif. and DUESSELDORF, Germany, August 26, 2002 -- NEC Corporation (NASDAQ: NIPNY) and its wholly owned subsidiaries in the United States and Europe, NEC Electronics Inc. and NEC Electronics (Europe) GmbH., today announced the availability of 0.13-micron (drawn) embedded DRAM technology based on NEC's high-performance embedded DRAM process. Operating at 1.2 volts (V), NEC's embedded DRAM has a typical random access speed of up to 314 megahertz (MHz) with one clock latency and a typical page-mode access speed of 595 MHz, making it ideal for complex system-on-chip (SoC) designs in communications, consumer and high-end computing applications that require high speed, low latency and low power consumption. NEC's embedded DRAM is available in 8- and 9-megabit (Mb) hard macro cores as well as routable configurable macro cores, giving designers the flexibility to use a variety of embedded DRAM within a single SoC. NEC's low-k dielectric embedded DRAM copper process is fully compatible with its standard CMOS process, which means that designers can easily integrate standard embedded DRAM with NEC's CMOS-based intellectual property.
"NEC is committed to delivering key ASIC technologies such as embedded DRAM that ensure high performance and reliability for our customers," said Kyuichi Hareyama, general manager, Network Core LSI Development Division, NEC Electron Devices, NEC Corporation. "With our high-speed, low-power embedded DRAM and CMOS-compatible process technology, our customers now have the opportunity to create truly high-performance, differentiated products required by the next generation of systems."
According to market research firm, In-Stat/MDR, worldwide merchant market dollar shipments of highly complex, cell-based designs containing at least one or more blocks of DRAM, in conjunction with other embedded functions, will grow from $95 million in 2001 to $250 million by 2006, a CAGR of 21 percent.
Broad Range of Embedded DRAM Solutions
NEC's embedded DRAM process is a fully qualified 0.13-micron, low-k dielectric process. The full-metal process dramatically improves speed while reducing power consumption. NEC's process employs both a cylindrical-type stacked capacitor structure that ensures high yields and a low-temperature metal-insulated-metal (MIM) capacitor process that accelerates performance.
Unlike its commodity DRAM process, NEC's embedded DRAM process uses the same structure as its standard CMOS process, and thus is fully compatible with that process. This compatibility dramatically reduces turnaround time by minimizing the number of process steps needed to add embedded DRAM.
With today's announcement, NEC offers embedded DRAM solutions to support customers using the company's CB-12 and CB-130 ASIC libraries. The CB-12 embedded DRAM operates at 1.5 volts and up to 222 MHz (typical) in random access mode with the one clock latency typically featured in fast SRAM solutions. The CB-130 embedded DRAM operates at 1.2 volts and up to 314 MHz (typical) in random access mode with one clock latency. The NEC embedded DRAM process achieves these unprecedented speeds and power consumption levels by keeping parasitic resistance and capacitance low.
NEC's embedded DRAM macro uniquely allows embedded DRAM blocks to be rotated to any orientation on a chip, simplifying integration with other on-chip components while preserving the performance and power consumption benefits afforded by NEC's process. Additionally, the upper metal layers of an ASIC can be routed over the top of embedded DRAM blocks, simplifying chip design, improving timing and conserving silicon. NEC's embedded DRAM is ideal for consumer products such as hand-held wireless devices and cell phones, high-end networking systems including ATM switches and routers, and business tools such as printers and PC graphics cards.
Availability
NEC's new embedded DRAM is now available for two of NEC's ASIC libraries, CB-12 and CB-130. For the CB-12 library, 4- and 8-Mb embedded DRAM configurations are currently available in sample volumes. For the CB-130 library, 8- and 9-Mb embedded DRAM configurations are expected to be available in sample volumes in December 2002. Embedded DRAM cores are also currently available for each library.
About NEC Electronics Inc.
NEC Electronics Inc., headquartered in Santa Clara, Calif., is one of the leading developers, manufacturers and suppliers of semiconductor products in the United States. Committed to meeting customers' cost, performance and time-to-market requirements, the company offers solutions ranging from standard products, including electron components, to system-on-a-chip (SoC) solutions, as well as customized products for next-generation designs. NEC Electronics also offers customers the benefits of a local manufacturing facility in Roseville, Calif., and the global manufacturing capabilities of its parent company, NEC Corporation (NASDAQ: NIPNY). For more information about products offered by NEC Electronics Inc., visit the NEC Electronics website at : http://www.necel.com/
About NEC Corporation
NEC Corporation (NASDAQ: NIPNY) (FTSE: 6701q.1) is one of the world's leading providers of Internet, broadband network and enterprise business solutions dedicated to meeting the specialized needs of its diverse and global base of customers. Ranked as one of the world's top patent-producing companies, NEC delivers tailored solutions in the key fields of computer, networking and electron devices, through its three market-focused, in-house companies: NEC Solutions, NEC Networks and NEC Electron Devices. NEC Corporation employs more than 140,000 people worldwide and had net sales of approximately $39 billion in the fiscal year ended March 2002. For additional information, please visit the NEC home page at: http://www.nec.com/
About NEC Electronics (Europe) GmbH
NEC Electronics (Europe) GmbH, headquartered in Duesseldorf, Germany, is a leading developer, manufacturer and supplier of semiconductor products in Europe. Committed to meeting customers' cost, performance and time-to-market requirements, the company offers solutions ranging from standard products to system-on-a-chip (SoC) solutions, as well as customized products for next-generation designs. NEC Electronics also offers customers the benefit of state-of-the-art manufacturing facilities in Ireland, and the global manufacturing capabilities of its parent company, NEC Corporation. For more information, visit the NEC Electronics website at : http://www.ee.nec.de/
|
Related News
- NEC Electronics America Uses Cadence Encounter for High-performance, Low-power ARM11 Processor
- ARM And Lynuxworks Collaborative To Offer Developers A Platform For Low-power, High-performance Embedded Linux Applications
- picoTurbo Announces pT-120 Portable Low-power 32-bit Processor Core for High-performance SOC Designs
- Fujitsu Develops Technology for Low-Power, High-Performance 45nm Logic Chips
- SiCortex Inc. Licenses MIPS64 Architecture for Low-power, High-performance Teraflop Computing
Breaking News
- Ubitium Debuts First Universal RISC-V Processor to Enable AI at No Additional Cost, as It Raises $3.7M
- TSMC drives A16, 3D process technology
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers
- Blueshift Memory launches BlueFive processor, accelerating computation by up to 50 times and saving up to 65% energy
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
Most Popular
- Cadence Unveils Arm-Based System Chiplet
- CXL Fabless Startup Panmnesia Secures Over $60M in Series A Funding, Aiming to Lead the CXL Switch Silicon Chip and CXL IP
- Esperanto Technologies and NEC Cooperate on Initiative to Advance Next Generation RISC-V Chips and Software Solutions for HPC
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
- Arteris Selected by GigaDevice for Development in Next-Generation Automotive SoC With Enhanced FuSa Standards
E-mail This Article | Printer-Friendly Page |