English
NXP Embraces 28nm FDSOI for MCUs
Peter Clarke, EETimes
1/18/2016 04:10 PM EST
PARIS—NXP is set to extend the use of 28nm fully-depleted silicon-on-insulator (FDSOI) process technology down to its low-power LPC microcontrollers, according to Goeff Lees, newly installed as general manager of MCU business at NXP Semiconductors NV.
Lees was speaking at an event to intended to emphasize that the enlarged NXP, after its merger with Freescale, is well place to offer processers, security and software for the Internet of Things in all of its various vertical applications, whether in the consumer, industrial, medical or automotives sectors.
|
E-mail This Article | 
|
|
Printer-Friendly Page |
|
||||||
NXP Hot IP
Related News
- sureCore PowerMiser Low Power SRAM IP Now on Samsung 28nm FDS Process Technology
- Cadence Custom/AMS Flow Certified for Samsung 28nm FD-SOI Process Technology
- Samsung Electronics Starts Commercial Shipment of eMRAM Product Based on 28nm FD-SOI Process
- Samsung Certifies Synopsys Design Platform for 28nm FD-SOI Process Technology
- Cadence DFM Signoff Solutions Achieve Qualification for Samsung 28nm FD-SOI/14nm/10nm Process Technologies
Breaking News
- Micon Global and Silvaco Announce New Partnership
- Arm loses out in Qualcomm court case, wants a re-trial
- Jury is out in the Arm vs Qualcomm trial
- Ceva Seeks To Exploit Synergies in Portfolio with Nano NPU
- Synopsys Responds to U.K. Competition and Markets Authority's Phase 1 Announcement Regarding Ansys Acquisition