English
Samsung Plans 3nm Gate-All-Around FETs in 2021
Dylan McGrath, EETimes
5/23/2018 00:01 AM EDT
SANTA CLARA, Calif. — Samsung Electronics laid out plans to bring to mass production in 2021 the architectural successor to FinFETS, gate-all-around (GAA) transistors, at the 3nm node. The South Korean giant also reaffirmed plans to begin 7nm production using extreme ultraviolet (EUV) lithography in the second half of this year at its annual foundry technology forum here Tuesday (May 22).
GAA technology has been under development since the early 2000s by Samsung and other firms. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides of the channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.
|
E-mail This Article | 
|
|
Printer-Friendly Page |
|
||||||
Related News
- Synopsys and Samsung Release Certified 3nm Gate-All-Around AMS Design Reference Flow for Early Design Starts
- Samsung Readies Gate-All-Around Ramp
- Cadence Digital Implementation and Parasitic Extraction Tools Enabled for Samsung Foundry Gate-All-Around Technology
- Synopsys Fusion Design Platform Enables Successful Tapeout of Samsung Foundry's Industry-first Gate-All-Around Transistor SoC
- Alphawave Semi Expands Collaboration with Samsung, Adds 3nm Connectivity IP to Meet Accelerated AI and Data Center Demand
Breaking News
- Arm loses out in Qualcomm court case, wants a re-trial
- Jury is out in the Arm vs Qualcomm trial
- Ceva Seeks To Exploit Synergies in Portfolio with Nano NPU
- Synopsys Responds to U.K. Competition and Markets Authority's Phase 1 Announcement Regarding Ansys Acquisition
- Alphawave Semi Scales UCIe™ to 64 Gbps Enabling >20 Tbps/mm Bandwidth Density for Die-to-Die Chiplet Connectivity