Toshiba Unveils 130nm FFSA Development Platform Featuring High Performance, Low Power and Low Cost Structured Array

Long-term supply using a subsidiary’s fab

TOKYO– November 13, 2018 -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced a new 130nm manufacturing process node based FFSA™ (Fit Fast Structured Array), an innovative custom SoC development platform featuring high performance, low cost and low power consumption^[1].

Toshiba provides ASIC (Application Specific IC) and FFSA™ platforms that suit the customer's business environment and requirements, that also deliver efficient solutions for custom SoC development. FFSA™ devices use a silicon-based master slice which is common in combination with upper metal layers that are reserved for customization. By customizing only a few masks, FFSA™ offers much lower NRE costs than individual ASIC development. It also enables significant reductions in development cost and provides samples and mass-production in a short period of time than for conventional ASIC’s. Additionally, FFSA™ enables higher performance and lower power consumption than FPGA (Field Programmable Gate Array) using ASIC design methodology and its library. ^[1]

The 130nm process series joins Toshiba’s current 28nm, 40nm, and 65nm process portfolio making FFSA™ a suitable option for the growing industrial equipment market.

The 130nm FFSA™ devices designed on the platform will be manufactured by Japan Semiconductor, a subsidiary of Toshiba Electronic Devices & Storage Corporation with a long and proven history of expertise in manufacturing ASIC, ASSP and microcomputers. This will ensure long-term supply and meet the needs of customer business continuity plans.

The new series deliver the performance and integration needed for industrial apparatus, communication facilities, OA equipment and consumer products where steady market expansion is expected.

FFSA™ lineup

Process technology	130nm	65nm	40nm	28nm
The maximum gate number[2]	912Kgate	21Mgate	25Mgate	100Mgate
Maximum SRAM capacity	664Kbit	19Mbit	30Mbit	207Mbit
Maximum transceiver speed	－	－	12.5Gbps	28Gbps
Number of maximum transceiver lanes	－	－	14	64
Number of maximum I/O pins	337	1110	720	928

Notes:

[1] Toshiba in-house comparisons of conventional FPGA products.

[2] The number of available gates is a guideline and will vary by application.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

Our 22,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 800-billion yen (US$7 billion) and to contributing to a better future for people everywhere.
Find out more about us at https://toshiba.semicon-storage.com/ap-en/top.html