Spin Memory Announces Extension of Series B Funding
All Major Investors Participate to Support Continued Innovation for MRAM
FREMONT, Calif. — July 17, 2020 -- Spin Memory, Inc. (Spin Memory), the leading developer of MRAM technologies, today announced an extension of its Series B funding round, having received additional investment from all major investors. The funding includes recent investors, Arm, Applied Ventures, LLC (the venture capital arm of Applied Materials, Inc.) and Abies Ventures (Abies), as well as the company’s founding investor, Allied Minds.
“The additional investment validates the work we’re doing here at Spin Memory and demonstrates the value of our unique MRAM IP offerings – especially during such challenging times,” said Tom Sparkman, CEO of Spin Memory. “We are proud to be part of the growing MRAM eco-system in both the embedded and stand-alone implementations.”
As the industry demand for high-speed, low-leakage, non-volatile memory continues to grow, Spin Memory is the pioneer in bringing MRAM closer and closer to SRAM-like performance as a new mainstream memory solution. Applications such as autonomous driving, artificial intelligence and edge computing are all counting on a vast expansion of memory and Spin’s MRAM IP holds the key to high- retention, high-endurance, high-density and high-speed. Bolstered by over 250 patents, a commercial agreement with Applied Materials, and a licensing agreement with Arm, the future is bright for Spin- powered MRAM.
“The rapid expansion of the Internet of Things and edge computing is fueling the need for new types of fast, low-power memory,” said Om Nalamasu, President of Applied Ventures and Chief Technology Officer of Applied Materials. “Applied Ventures is excited to support Spin Memory as part of our current portfolio of active investments spanning Materials to Systems and we look forward to their success as they work to accelerate commercialization of MRAM technology.”
The additional funding will support Spin Memory’s continued research for MRAM as the company pushes the envelope – exploring new discoveries and advances to bring SRAM-like MRAM to market. As DRAM and SRAM are hitting scaling and efficiency limits, demand for a novel, memory alternative is rapidly growing. Spin Memory, and the company’s investors, are working together to bring MRAM’s potential to reality to meet this market need.
About Spin Memory
Spin Memory, Inc. is the pre-eminent MRAM IP supplier. Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and products provide SRAM-like speed and endurance that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. For more information, please visit www.spinmemory.com.
|
Related News
- Spin Memory Announces $52 Million Series B Funding Round
- Baya Systems Raises $36M+ to Propel AI and Chiplet Innovation
- PQShield raises $37m in Series B funding to deliver the widespread commercial adoption of quantum resistant cryptography
- Expedera Raises $20M Series B Funding Round Led By indie Semiconductor
- Chiplet Interconnect Pioneer Eliyan Closes $60 Million Series B Funding Round, Co-led by Samsung Catalyst Fund and Tiger Global Management to Address Most Pressing Challenge in Development of Generative AI Chips
Breaking News
- Breker RISC-V SystemVIP Deployed across 15 Commercial RISC-V Projects for Advanced Core and SoC Verification
- Veriest Solutions Strengthens North American Presence at DVCon US 2025
- Intel in advanced talks to sell Altera to Silverlake
- Logic Fruit Technologies to Showcase Innovations at Embedded World Europe 2025
- S2C Teams Up with Arm, Xylon, and ZC Technology to Drive Software-Defined Vehicle Evolution
Most Popular
- Intel in advanced talks to sell Altera to Silverlake
- Arteris Revolutionizes Semiconductor Design with FlexGen - Smart Network-on-Chip IP Delivering Unprecedented Productivity Improvements and Quality of Results
- RaiderChip NPU for LLM at the Edge supports DeepSeek-R1 reasoning models
- YorChip announces Low latency 100G ULTRA Ethernet ready MAC/PCS IP for Edge AI
- AccelerComm® announces 5G NR NTN Physical Layer Solution that delivers over 6Gbps, 128 beams and 4,096 user connections per chipset
![]() |
E-mail This Article | ![]() |
![]() |
Printer-Friendly Page |