MoSys Ports 1T-SRAM-Q Technology to NEC Electronics' 90-Nanometer Logic Process; Initial Silicon Verification Achieved for 1T-SRAM-R, in Fabrication for 1T-SRAM-Q

SUNNYVALE, Calif.--(BUSINESS WIRE)--Nov. 24, 2003--MoSys, Inc. (Nasdaq:MOSY) the industry's leading provider of high density SoC embedded memory solutions today announced the initial silicon verification of MoSys' 1T-SRAM-R(TM) memory technology on NEC Electronics' 90-nanometer standard logic process. Silicon testchips for MoSys' quad density 1T-SRAM-Q(TM) embedded memory technology are also currently being manufactured on NEC Electronics' 90-nanometer logic process. This represents the latest milestone in a successful relationship between the companies on multiple process generations and memory technologies starting in 1999.

"Today's system level LSI designers need to efficiently embed more and more memory in their designs to reach the difficult performance and power requirements demanded by their markets," said Hirokazu Hashimoto, executive vice president at NEC Electronics Corporation, "We are very pleased to reach this new milestone in our cooperation with MoSys to bring its latest embedded memory technologies to our SoC customers."

"MoSys has already very successfully partnered with NEC Electronics to deliver leading-edge SoC embedded memory solutions in high volume," commented Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys "We look forward to continuing and broadening this relationship to enable NEC Electronics' 90-nanometer logic process customers to take advantage of our latest 1T-SRAM-Q and 1T-SRAM-R technologies for their SoC designs."

ABOUT 1T-SRAM-Q
1T-SRAM-Q technology is the latest offering from MoSys as part of their embedded memory solutions. 1T-SRAM-Q achieves its exceptional density by using bit cells of just 0.3 micron2 in the 90-nanometer logic process. Using only one additional, non-critical mask on the standard logic process, 1T-SRAM-Q enables cost-effective integration of large amounts of embedded memory on SoC designs without any change to the other logic IP blocks or libraries. 1T-SRAM-Q incorporates MoSys' proprietary Transparent Error Correction(TM) (TEC(TM)) technology delivering the additional benefits of improved yield and reliability with elimination of laser repair and soft error concerns.

About MoSys
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.

Contact MoSys, Inc. Fill out this form for contacting a MoSys, Inc. representative. Your Name: Your E-mail address: Your Company address: Your Phone Number: Write your message: