MoSys Licenses Advanced 1T-SRAM Embedded Memory to Agilent Technologies

Global technology leader licenses MoSys' memory technology for networking, computing and imaging products

SUNNYVALE, Calif.--(BUSINESS WIRE)--Jan. 12, 2004-- MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions today announced that Agilent Technologies Inc., a leading provider of application specific integrated circuits (ASICs), has licensed MoSys' 1T-SRAM(R) embedded memory technology. The long-term agreement enables Agilent to integrate MoSys' embedded memory into its current and next-generation ASIC and SoC products.

"MoSys' 1T-SRAM technology provides us with a solution for embedding large, high-performance, high-density memories into a wide range of ASIC and SoC applications," said James Stewart, vice president and general manager of Agilent's ASIC Products Division. "Our selection of this innovative memory technology reflects an ongoing commitment to meeting the performance requirements of our customers."

MoSys' 1T-SRAM technologies have already been silicon-proven in six process generations - including 90 nanometers - and are in high-volume production in many consumer and communications products.

"As the semiconductor industry continues to require much greater quantities of high-performance memory in SoC designs, 1T-SRAM memories enable customers to reach new levels of performance, quality and low-costs that cannot be achieved using other embedded memory technologies," noted Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. "We are pleased to add Agilent Technologies to our growing list of leading semiconductor customers."

ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.


SOURCE: MoSys

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.