English
Mosys completes range of low-leakage embedded memories
6T-SRAM-R compilers for small memories complement industry-leading high-density, low-leakage 1T-SRAM-M products
SUNNYVALE, Calif., Jan. 20, 2004 – MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions, announced today a range of embedded memory products to help SoC designers reduce leakage in their 0.13-micron chips. To complement existing high-density, low-leakage 1T-SRAM-M™ and 1T-SRAM-MQ™ memory technologies, MoSys now offers compilers for low-leakage 6T-SRAM-R™ memories to reduce the chip leakage caused by other six-transistor embedded memories.
In generic 0.13-micron logic processes, replacing large six-transistor memories with 1T-SRAM-M technology can reduce leakage by more than a factor of four, in addition to the considerable die size reduction. Using MoSys’ new 6T-SRAM-R technology compilers, designers can also now reduce the leakage on the remaining six-transistor memories by more than a factor of two, further optimizing the total SoC leakage without compromising die size or requiring special processes.
“Customers are very pleased with the quality and leakage advantages offered by our 1T-SRAM® technologies for large memories and asked MoSys to help them extend these benefits to the small memories in their designs,” stated Dr. Fu-Chieh Hsu, MoSys’ president and CEO. “In response, we developed our 6T-SRAM-R compiler which delivers a new standard of quality, combined with much lower leakage than other six-transistor embedded memories.”
In addition to leakage suppression, MoSys’ 6T-SRAM-R compiler eliminates memory soft errors and the need for laser repair by optionally including MoSys’ Transparent Error Correction™ (TEC™) technology used in MoSys’ 1T-SRAM-R™ and 1T-SRAM-Q™ technologies for applications requiring a high-level of quality and reliability in smaller embedded memories.
Single-port and dual-port compilers covering 1- to 512-Kbit sizes are being offered for MoSys’ low-leakage 6T-SRAM-R technology. Silicon reports are available from MoSys.
About MoSys
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
SOURCE: MoSys, Inc.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.
SUNNYVALE, Calif., Jan. 20, 2004 – MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions, announced today a range of embedded memory products to help SoC designers reduce leakage in their 0.13-micron chips. To complement existing high-density, low-leakage 1T-SRAM-M™ and 1T-SRAM-MQ™ memory technologies, MoSys now offers compilers for low-leakage 6T-SRAM-R™ memories to reduce the chip leakage caused by other six-transistor embedded memories.
In generic 0.13-micron logic processes, replacing large six-transistor memories with 1T-SRAM-M technology can reduce leakage by more than a factor of four, in addition to the considerable die size reduction. Using MoSys’ new 6T-SRAM-R technology compilers, designers can also now reduce the leakage on the remaining six-transistor memories by more than a factor of two, further optimizing the total SoC leakage without compromising die size or requiring special processes.
“Customers are very pleased with the quality and leakage advantages offered by our 1T-SRAM® technologies for large memories and asked MoSys to help them extend these benefits to the small memories in their designs,” stated Dr. Fu-Chieh Hsu, MoSys’ president and CEO. “In response, we developed our 6T-SRAM-R compiler which delivers a new standard of quality, combined with much lower leakage than other six-transistor embedded memories.”
In addition to leakage suppression, MoSys’ 6T-SRAM-R compiler eliminates memory soft errors and the need for laser repair by optionally including MoSys’ Transparent Error Correction™ (TEC™) technology used in MoSys’ 1T-SRAM-R™ and 1T-SRAM-Q™ technologies for applications requiring a high-level of quality and reliability in smaller embedded memories.
Single-port and dual-port compilers covering 1- to 512-Kbit sizes are being offered for MoSys’ low-leakage 6T-SRAM-R technology. Silicon reports are available from MoSys.
About MoSys
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.
SOURCE: MoSys, Inc.
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.
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