SigmaTel Chooses MoSys' 1T-SRAM Embedded Memory Technology for Consumer Applications

SUNNYVALE, Calif. & AUSTIN, Texas--(BUSINESS WIRE)--Feb. 23, 2004 -- MoSys, Inc. (NASDAQ:MOSY), the industry's leading provider of high density SoC embedded memory solutions, and SigmaTel, Inc. (NASDAQ:SGTL) a provider of application-specific mixed-signal integrated circuits (ICs) for the consumer electronics and computing markets, today announced a long-term agreement enabling SigmaTel, Inc. to license MoSys' 1T-SRAM(R) embedded memory technologies to enhanced future mixed-signal product features and benefits.

"We selected MoSys' 1T-SRAM technology for its consistent track record of volume production, proven performance, low power and cost advantages," said Roger Whatley, CTO and vice president of engineering at SigmaTel. "By using the MoSys high-density embedded memory solution, we can provide our customers an efficient, high quality, cost-effective solution for their next generation of products."

"We are pleased that SigmaTel has chosen MoSys' 1T-SRAM technology for their innovative products," noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "1T-SRAM technology can substantially reduce the die area and power as well as improve yields. As the proportion of SoC die area occupied by memory continues to grow, these benefits translate to dramatic advantages for the whole SoC and, accordingly, for SigmaTel and its customers."

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com/.

ABOUT SIGMATEL

SigmaTel, Inc. a fabless semiconductor company headquartered in Austin, Texas, designs, develops, and markets proprietary, analog intensive, mixed-signal ICs for a variety of products in the consumer electronics and computing markets, including portable compressed audio players, such as MP3 players, notebook and desktop PCs, DVD players, digital televisions, and set-top boxes. SigmaTel provides complete, system-level solutions that include highly integrated ICs, customizable firmware and software, software development tools, reference designs, and applications support. The Company's focus is on providing system-level solutions that enable customers to rapidly introduce and offer electronic products that are small, lightweight, power-efficient, reliable, and cost-effective. SigmaTel is ISO 9001:2000 certified and is committed to providing customers with high performance, quality products along with superior customer service. More information is available on SigmaTel's website at http://www.sigmatel.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

SOURCE: MoSys, Inc.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding MoSys, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.