Dec. 11, 2024 - ​​Scalable Platform ‘Opens the Door for Faster, More Energy-Efficient, and Cost-Effective Memory Solutions in Embedded Systems, Such as IoT, Mobile Devices, and Edge Computing’​'​​​

Nov. 16, 2023 - Why set the target at 10 nm when you can aim further? EC Thierry Breton raised the ante, proposing to scale FD-SOI down to 7 nm.

Sep. 21, 2023 - Alphacore is excited to be recognized for its achievements in total-dose testing on fully-depleted silicon-on-insulator (FDSOI) static random access memory (SRAM) with its latest publication in the August 2023 issue of TNS.

Jan. 03, 2023 - Weebit Nano Limited has taped-out (released to manufacturing) demonstration chips integrating its embedded Resistive Random-Access Memory (ReRAM) module in an advanced 22nm FD-SOI (fully depleted silicon on insulator) process technology.

Apr. 12, 2021 - Attopsemi, innovator of I-fuse™ one-time programmable (OTP) IP provider, announced today that its I-fuse OTP IP is now qualified for the GLOBALFOUNDRIES® (GF®) 22FDXTM platform. This qualification allows customers to benefit from the incorporation of a compact and robust OTP block into GF 22FDX ...

Feb. 22, 2021 - CEA-Leti and Dolphin Design have developed an adaptive back-biasing (ABB) architecture for FD-SOI chips that can be seamlessly integrated in the digital design flow with industrial-grade qualification, overcoming integration drawbacks of existing ABB techniques.

Jun. 11, 2020 - SkyWater Technology announced it has licensed MIT Lincoln Laboratory’s 90 nanometer (nm) fully depleted silicon-on-insulator (FDSOI) complementary metal-oxide-semiconductor (CMOS) process to produce radiation-hardened (rad-hard) electronics which can withstand harsh radiation environments.

Apr. 02, 2020 - L-UTSOI, a “compact model” dedicated to FD-SOI technologies and developed by CEA-Leti, has been selected as a standard model by the Compact Model Coalition (CMC), a working group composed of the major semiconductor companies and part of the Silicon Integration Initiative (Si2).

Dec. 16, 2019 - Mentor today announced it will provide a unique IC test solution for the eMRAM (embedded Magnetoresistive Random Access Memory) compiler IP from Arm, built on Samsung Foundry’s 28nm FDSOI process technology.

Oct. 24, 2019 - VeriSilicon, a Silicon Platform as a Service (SiPaaS®) company, today announced its comprehensive FD-SOI Design IP Platform with more than 30 IPs based on GLOBALFOUNDRIES® (GF®) 22FDX® platform.

Oct. 16, 2019 - sureCore Limited, a provider of low power SRAM products and custom memory design services, today announced that its PowerMiser low power SRAM IP is now available for designs targeting the Samsung 28nm FDS process.

Oct. 10, 2019 - To address the growing demand in the autonomous and electric vehicle market, Samsung offers various foundry solutions based on 28nm FDS and 14nm process

May. 13, 2019 - Cadence today announced that its custom and analog/mixed-signal (AMS) IC design flow has achieved certification for Samsung Foundry’s 28nm FD-SOI (28FDS) process technology.

Apr. 01, 2019 - Attopsemi's I-fuse™ provides small size, high reliability, low program voltage/current, low power and wide temperature to enable GLOBALFOUNDRIES 22nm FDX® for AI, IoT, automotive, industry, and communication applications

Mar. 07, 2019 - Samsung Electronics the world leader in semiconductor technology, today announced that it has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI) process technology, ...

Feb. 19, 2019 - GLOBALFOUNDRIES (GF) and Dolphin Integration, a leading provider of semiconductor IP, today announced a collaboration to develop a series of adaptive body bias (ABB) solutions to improve the energy efficiency and reliability of system-on-chip (SoC) on GF’s 22nm FD-SOI (22FDX®) process technology ...

Dec. 20, 2018 - Mobile Semiconductor announced their new 22nm FDX ULP (Ultra Low Power) Memory Compiler complete with a comprehensive set of features that cement their leadership position in FDX Memory Compiler offerings.

Jan. 22, 2019 - Soitec (Euronext Paris), a world leader in designing and manufacturing innovative semiconductor materials, announced today an expanded collaboration with Samsung Foundry to ensure the volume supply of fully depleted silicon-on-insulator (FD-SOI) wafers.

Nov. 19, 2018 - Attopsemi's I-fuse™ OTP provides ultra-low read voltage/current, ultra-low program voltage/current, small size and wide temperature to enable GLOBALFOUNDRIES 22nm FD-SOI for Fraunhofer Institute for Photonic Microsystems’ (IPMS) 61GHz RFID tags in IoT applications.

Nov. 19, 2018 - Attopsemi Technology announced today that the company’s 256Kb OTP (One-Time Programmable) IP passed 250°C and 1,000 hours wafer-level burn-in studies. When programming I-fuse™ within the specifications, no defect was found in tens of millions I-fuses™ after several stress conditions. Moreover, ...

Nov. 01, 2018 - VeriSilicon Holdings Co., Ltd. (VeriSilicon) today announced its Bluetooth Low Energy (BLE) 5.0 RF IP based on GLOBALFOUNDRIES 22FDX® FD-SOI process.

Oct. 17, 2018 - eMemory today announced that its one-time programmable non-volatile memory (OTP) IP, NeoFuse, has been qualified for 22nm Fully-Depleted Silicon On-Insulator (FD-SOI), also known as 22FDX, process technology.

Oct. 01, 2018 - Attopsemi Technology provided a talk along with an AIoT Panel in a FD-SOI Forum on September 18 in Shanghai, China. Leading companies worldwide have been meeting again for the sixth time in this FD-SOI Forum which attracted several hundred key attendees.

Sep. 26, 2018 - In its first annual conference since halting work on 7nm, Globalfoundries described a handful of enhancements to its existing nodes. It also showcased a new customer making at least three embedded deep-learning chips in its 22nm fully depleted silicon-on-insulator process.

Jun. 07, 2018 - Intento Design has announced its collaboration with STMicroelectronics (ST) in pushing forward its ID-XploreTM EDA software aimed to solve the critical design challenges in the FD-SOI process nodes.

Jun. 06, 2018 - Globalfoundries Inc. (Santa Clara, Calif.) is researching the addition of a second non-volatile memory technology option, and potentially more, to its offering on 22nm FDSOI.

May. 23, 2018 - GLOBALFOUNDRIES today announced that its 22nm FD-SOI (22FDX®) technology platform has been certified to AEC-Q100 Grade 2 for production.

Apr. 27, 2018 - Globalfoundries announced it has 36 design wins for its 22nm fully depleted silicon-on-insulator process, more than a dozen of which should tape out this year. Rival Samsung said it expects to tape out more than 20 chips in its 28nm FD-SOI process this year.

Jan. 11, 2018 - Design services and IP licensing firm Racyics GmbH (Dresden, Germany) has developed foundation IP for Globalfoundries' 22nm FDSOI manufacturing process 22FDX that operates down to 0.4V and is suitable for ultra-low power microcontroller designs.

Jan. 09, 2018 - When asked if Globalfoundries could support phase-change memory in FDSOI Alain Mutricy, senior vice president of product marketing told eeNews Europe: "That's not the announcement we are making today."

Jan. 09, 2018 - GLOBALFOUNDRIES and STMicroelectronics (NYSE: STM) today announced that ST has selected GF’s 22nm FD-SOI (22FDX®) technology platform to support its next-generation of processor solutions for industrial and consumer applications.

Nov. 29, 2017 - Programmable logic device vendor Lattice Semiconductor Corp. (Portland, Oregon) is migrating its entire product line to fully-depleted silicon-on-insulator (FDSOI) manufacturing process technology.

Sep. 25, 2017 - Synopsys today announced that the Synopsys Design Platform has been fully certified for use on Samsung Foundry's 28FDS (FD-SOI) process technology. A Process Design Kit (PDK) and a comprehensive reference flow, compatible with Synopsys' Lynx Design System, containing scripts, design methodologies and ...

Sep. 25, 2017 - Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced that its set of Design for Manufacturing (DFM) tools are now qualified on Samsung Electronics’ 28nm FD-SOI/14nm/10nm process technologies.

Sep. 21, 2017 - GLOBALFOUNDRIES today announced the availability of its scalable, embedded magnetoresistive non-volatile memory (eMRAM) technology on the company’s 22nm FD-SOI (22FDX®) platform. As the industry’s most advanced embedded memory solution, GF’s 22FDX eMRAM provides high performance and superior ...

Sep. 20, 2017 - Synopsys today announced that GLOBALFOUNDRIES (GF) has certified the Synopsys Design Platform for the GF 22nm FD-SOI (22FDX™) process, ensuring designers achieve optimized implementation and predictable signoff results using industry leading digital design tools.

Sep. 20, 2017 - GLOBALFOUNDRIES and Soitec today announced that they have entered into a five-year agreement to ensure the volume supply of state-of-the-art fully depleted silicon-on-insulator (FD-SOI) wafers.

Sep. 14, 2017 - Soitec, a leader in designing and manufacturing semiconductor materials for the electronics industry, is launching a pilot line to produce fully depleted silicon-on-insulator (FD-SOI) wafers in its Singapore wafer fab.

May. 23, 2017 - GLOBALFOUNDRIES and the Chengdu municipality today announced an investment to spur innovation in China’s semiconductor industry. The partners plan to build a world-class FD-SOI ecosystem including multiple design centers in Chengdu and university programs across China.

May. 11, 2017 - STMicroelectronics NV (Geneva, Switzerland) has opted to use phase-change memory as an embedded non-volatile memory option for its 28nm fully-depleted silicon-on-insulator (FDSOI) process.