Search IP on Samsung

Scalable, On-Die Voltage Regulation for High Current Applications

40G UCIe PHY IP on Samsung SF4X

• Supports data rates up to 40Gb/s and bandwidth density of 12.9Tbps/mm
• Compliant with the latest UCIe specification

PCIe 4.0 PHY on 5nm

• Low power consumption and small area
• Support 1-, 2- and 4- lane configurations
• Automatic built-in self-test (Loopback)

0.75V Power On Reset

• 4nm Low Power Plus (LN04LPP) CMOS device technology
• Single power supply: 0.675V to 0.825V
• Operational Junction Temperature(Tj): -40℃ to 125℃

8.5GHz Fractional-N/SSC PLL

• 4nm Low Power Plus (LN04LPP) CMOS device technology
• Dual power supply of 1.2V±10% and 0.85V+5% ~ 0.75V-10%
• Operating junction temperature(TJ): -40°C ~ 125°C

1.8V general purpose I/O for 4nm FinFET

• Functional I/O circuit and ESD protection cells
• Enable higher voltage tolerance, beyond foundry I/O voltage levels
• Overvoltage tolerant design

PCIe 3.0 PHY in Samsung (SF5A

UCIe-A PHY for Advanced Package (x64) in Samsung (SF2)

UCIe-A PHY for Advanced Package (x64) in Samsung (SF4X)

DDR5 PHY for Samsung SF4X

• Low latency, small area, low power
• Compatible with JEDEC standard DDR5 SDRAMs up to 8400 Mbps
• Compatible with JEDEC standard DDR4 SDRAMs up to 3200 Mbps

LPDDR5X/5/4X PHY IP in SF5A for Automotive

• Supports JEDEC standard LPDDR5X, LPDDR5 and LPDDR4X SDRAMs
• Support for data rates up to 8533 Mbps

PUF