The block is a nonvolatile electrically erasable programmable read-only memory (EEPROM) with volume 1 Kbyte (16(bit per word) x 8(words per page) x 64(pages)) with single-bit output data and parallel write data in one word. Data writing is performed by setting data at DI<15:0> and write process execute if signal WR="1". Data DI<15:0>, page address ADR_P<5:0>, word address in page ADR_W<2:0> are latched into internal registers and cannot be changed until the end of the writing process. At the end of the writing, the READY = "1" flag is set. Data reading is carried out by specifying the page address ADR_P<5:0>, word address in the page ADR_W<2:0> and bit address in the word ADR_B<3:0>. After applying the reading strobe, the DO signal is set at the output corresponding to the reading data from the corresponding addresses of the EEPROM cell. EEPROM also has a 7MHz built-in oscillator. The oscillator has frequency control inputs to compensate for process variation. Memory is optimized for usage in the industrial and commercial applications, requiring low power consumption and supply voltage.