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400G ultra low latency 56/112G FEC and SERDES IP sub 10ns latency
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Bulk 40ULP Single Port SRAM with low power retention mode, high speed pins on 1 side
Low Leakage. Mobile Semiconductor's Bulk 40 ULP BULKSRAM memory compiler generates memory instances using the premier low power 40nm process.. Each ultra-low leakage memory instance primarily uses low leakage HVT (LLHVT) devices and source biasing to minimize standby current. Read and write assist circuits ensure reliable operations with a periphery power supply as low as 0.72V.
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