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Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
Features
- Process: Samsung 28nm FDSOI process
- Supply voltage: 2.25V<=VDD25<=2.75V, 0.9V<=VDD10<=1.1V 1.62V<=VDD18<=1.98v
- Mos device: pfet, nfet, egpfet, egnfet, rpposab
- Operating current:VDD25<24mA
- Operating junction temperature: - 40°C ~ +25°C ~ +125°C
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