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Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver
Features
- Process: Samsung 28nm FDSOI process (0.9V / 1.8V)
- Supply voltage: 1.62V<=AVDD18<=1.98V, 0.9V<=AVDD10(VDD10)<=1.1V
- Mos device: pfet, nfet, egpfet, egnfet
- Operating current:AVDD18<24mA AVDD10<2mA
- Operating junction temperature: - 40°C ~ +25°C ~ +125°C
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