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MOSAID Acquires Pseudo-SRAM Patent PortfolioMOSAID to Add One Acquired Patent to Infringement Case Against Micron OTTAWA, Ontario, Canada – November 30, 2006 - MOSAID Technologies Incorporated (TSX: MSD) today announced that it has acquired a portfolio of nine patents related to Pseudo-Static Random Access Memory (PSRAM) technology. The portfolio consists of three United States patents, three Taiwanese patents and three Korean counterpart patents. Following a due diligence review, MOSAID obtained all rights and titles to the patents for an undisclosed amount from a private company. MOSAID also announced that the Company today filed a motion to amend its complaint by adding one of the newly acquired patents to its patent infringement litigation against Micron Technology, Inc. in the Eastern District of Texas, Marshall Division. The proposed amended complaint now alleges infringement of 12 of MOSAID's U.S. patents. The additional patent - U.S. Patent No. 6,847,573 - is being asserted against Micron's PSRAM products. "The acquisition of patents is a key strategy for broadening the reach of our patent licensing program," said John Lindgren, Senior Vice President Patent Licensing and General Counsel, MOSAID. "The addition of these patents strengthens the coverage of our patent portfolio in the growing PSRAM market." PSRAM devices are used primarily in mobile consumer products such as cellular telephones, where high density, low-power memory chips are a key requirement. PSRAM memory chips combine a Dynamic RAM (DRAM) cell array for high density and low bit cost, with an SRAM interface to external devices. Cellular phones use PSRAM and Flash memory chips combined in multi-chip packages. Gartner Dataquest estimates that the global PSRAM market will reach US $2.1 billion by the end of 2006, up 50% over 2005. About MOSAID
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