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Virtual Silicon Expands Embedded Memory Offering With New SRAMs and Metal ROM
Virtual Silicon Expands Embedded Memory Offering With New SRAMs and Metal ROMSUNNYVALE, Calif., - November 28, 2001 - Virtual Silicon Technology, Inc., a leader in semiconductor intellectual property, today announced availability of three new high density memory instance generators for UMC 0.18 micron and 0.25 micron technologies. These products are available for immediate download through the Virtual Silicon web site at www.virtual-silicon.com. "The single port and dual port eSi-RAM[tm] memory generators offer a blend of features optimal for networking and telecommunication applications," said Mike Shamshirian, memory product marketing director at Virtual Silicon. "New SoC designs can embed a mix of single port and dual port SRAMs for higher performance and lower overall system cost." The single port eSi-RAM memory instances are offered for UMC 0.25 micron (L250) and 0.18 micron (L180) process technologies. The dual port eSi-RAM memory instances are offered for UMC 0.25 micron while the metal programmable eSi-ROM[tm] memory instances are offered for UMC 0.18 micron. The SRAM instances have synchronous architectures with bit write or word write features. The single port SRAMs use a six-transistor bit cell and handcrafted layout for smallest cell area and lowest power consumption. The dual port SRAMs use an eight-transistor cell designed for highest performance. Other features of the eSi-RAM memory generators are zero standby current, wide data bus and BIST interface. The eSi-ROM generator offers high speed, low power, wide data bus and interfaces to industry standard BIST controllers. Availability and Pricing About Virtual Silicon Technology Silicon Ready, eSi-RAM, eSi-ROM, and Virtual Silicon are trademarks of Virtual Silicon Technology, Inc. For more information contact: John Ford Lou Covey |
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