France's CNRS offers nano-memory IP

Peter Clarke, EETimes
10/19/2010 7:40 AM EDT

LONDON – France's Centre National de la Recherche Scientifique (CNRS) has done preliminary work on several nanoelectronic memory technologies that it now wishes to progress further through licensing agreements.

The barriers and potential for the voltage- and density-scaling of established memory devices – including DRAM, SRAM, Flash and phase-change memory – beyond the 22-nm node is one of hot topics for current memory R&D.

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