Elpida Develops Industry's First 25nm Process DRAM

Smallest Chip Size for a 2-Gigabit DDR3 SDRAM Achieved

TOKYO, JAPAN, May 2, 2011 – Elpida Memory, Inc. (TOKYO: 6665), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced it had developed a 2-gigabit DDR3 SDRAM using an industry-leading 25nm process for memory manufacturing. Using the most advanced process technology available Elpida has achieved the industry's smallest chip size for a 2-gigabit SDRAM.

The newly developed 25nm DRAM process technology requires 30% less cell area per bit compared with Elpida's 30nm process. The chip output for a 2-gigabit DDR3 SDRAM wafer using the new process is about 30% higher versus 30nm.

The new SDRAM is an eco-friendly as it contributes to lower energy consumption by PCs and digital consumer electronics. It outperforms Elpida's 30nm process products by saving on electric current (15% less operating current and 20% less current when on standby).

At the time the 25nm process was developed the structural changes required to shift from a 30nm process were minimized to hold down the capital expenditure needed for ramping up 25nm volume manufacturing.

By the end of 2011 Elpida also plans to begin volume production of 4-gigabit DDR3 SDRAM products using the 25nm process. Compared with the 30nm process a 44% increase in chip output per wafer is expected for this 4-gigabit DDR3 product. In addition, the new 25nm process will be used to support further development of Mobile RAM

TM

, Elpida's mainstay memory product.

The 25nm process 2-gigabit DDR3 SDRAM can support ultra-fast performance above DDR3-1866 (1866Mbps) and is compliant with low-voltage 1.35V high-speed DDR3L-1600 (1600Mbps).

Both sample shipments of the new 25nm 2-gigabit DDR3 SDRAM and volume production are expected to begin in July 2011.

Elpida continues to be a technology leader in the DRAM industry. It uses innovative design and process technology for the production of high-speed, low-power consumption and low-cost DRAMs.

New Product Features 

Part Number	EDJ2104BFSE / EDJ2108BFSE
Manufacturing Process	25nm CMOS
Memory Density	2G-bit
Data Width	x4-bit / x8-bit
Data Transfer Rate	1866Mbps and higher
Supply Voltage (VDD)	1.5V, 1.35V (Low voltage)
Operating Case Temperature Range (TC)	0 to 95°C

About Elpida

Elpida Memory, Inc. (Tokyo: 6665) is a leading manufacturer of Dynamic Random Access Memory (DRAM) integrated circuits. The company's design, manufacturing and sales operations are backed by world class technological expertise. Its 300mm manufacturing facilities, consisting of its Hiroshima Plant and a Taiwan-based joint venture, Rexchip Electronics, utilize the most advanced manufacturing technologies available. Elpida's portfolio features such characteristics as high-density, high-speed, low power and small packaging profiles. The company provides DRAM solutions across a wide range of applications, including personal computers, servers, mobile devices and digital consumer electronics. More information can be found at http://www.elpida.com.