Elpida Develops Industry's First 25nm Process 4-Gigabit DDR3 SDRAM

The Smallest 4-Gigabit DRAM Chip Size

Tokyo, Japan, September 26, 2011 – Elpida Memory, Inc. ("Elpida", TOKYO: 6665 JP), the Japan-based third largest Dynamic Random Access Memory ("DRAM") maker in the world, today announced it had completed development of the industry's first 25-nanometer (nm) ^[1] process 4-gigabit ^[2] DDR3 SDRAM. The new chip is also the smallest 4-gigabit DRAM ^[3].
The new cutting-edge smallest available 4-gigabit chip uses ultra fine-width 25nm process migration technology. Back in May, Elpida finished development of a 2-gigabit DDR3 SDRAM using the advanced 25nm process and began sample shipments in July.

By using ultra-fine process technology the 4-gigabit DDR3 SDRAM becomes a more energy efficient chip and achieves higher productivity. As a 4-gigabit product, its density is double that of Elpida's 2-gigabit DDR3 SDRAM based on the same process node. The newly developed 4-gigabit DRAM enhances productivity by about 45% compared with Elpida's 30nm 4-gigabit DDR3 SDRAM. Compared with this same 30nm DDR3, it reduces operating current by about 25-30% and standby current by about 30-50%. It has also realized the industry's highest speed data transfer rate.

DRAM is the indispensable working memory for supporting information processing in personal computers, mobile phones and many other kinds of electronic appliances. In recent years, there has been an explosive increase in demand for solutions to instantaneous processing of music, pictures, video and other high-density data. DRAMs used in those applications must be capable of not only faster speeds but also lower power consumption.

The new 25nm DDR3 SDRAM is expected to find applications in PCs and in servers used in data centers and other facilities that perform large-scale information processing tasks. Other applications are likely to include tablet PCs and UltraBook^TM (an ultra-thin notebook PC).

Elpida, a leading company in the DRAM industry, is focused on design and development of high-density and low-power DRAMs. As a leading provider of memory solution company, Elpida is committed to provide the most advanced products.

Sample shipment and mass production of the new 25nm 4-gigabit DDR3 SDRAM is expected to start by the end of this year.

1. A nanometer (nm) is a unit of measure. By definition a nanometer is one-billionth of a meter.
2. In the case of DRAMs, a "gigabit" is a unit for expressing an amount of data (volume of information). 1 gigabit is equal to 1,073,741,824 bits (two raised to the power of 30 or about one billion).
3. DRAM is the abbreviation for Dynamic Random Access Memory. DRAM is a type of semiconductor memory that both reads and writes information data needed by an electronic device. The data is stored for only brief moments. When device power is turned off the temporarily stored data is lost.

Key Features of the New 25nm DDR3 SDRAM

Part numbers	EDJ4104BCBG / EDJ4108BCBG
Manufacturing process	25nm CMOS
Memory density	4-gigabit
Data width	x4-bit / x8-bit
Per pin data transfer rate	1866Mbps and higher
Supply Voltage (VDD)	1.5V, 1.35V (Low voltage)
Operating case temperature range (TC)	0 to 95°C

About Elpida
Elpida Memory, Inc. (Tokyo: 6665) is a leading manufacturer of Dynamic Random Access Memory (DRAM) integrated circuits. The company's design, manufacturing and sales operations are backed by world class technological expertise. Its 300mm manufacturing facilities, consisting of its Hiroshima Plant and a Taiwan-based joint venture, Rexchip Electronics, utilize the most advanced manufacturing technologies available. Elpida's portfolio features such characteristics as high-density, high-speed, low power and small packaging profiles. The company provides DRAM solutions across a wide range of applications, including personal computers, servers, mobile devices and digital consumer electronics. More information can be found at http://www.elpida.com.