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TSMC starts FinFETs in 2013, tries EUV at 10 nmRick Merritt, EETimes SAN JOSE, Calif. – Facing heated competition from Globalfoundries and Samsung, TSMC pulled in plans for initial production of its 16-nm FinFET process to the end of 2013. In addition, it hopes to adopt extreme ultraviolet lithography to make 10-nm chips starting in late 2015 but is still researching e-beam as an alternative. Company executives detailed the new processes and how they aim to get there at an annual symposium here. They also provided an update on their work on 3-D chip stacks and their ongoing ramp of today’s 28-nm process node.
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