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X-Fab expands mixed-signal foundry portfolio with 0.35-micron process
X-Fab expands mixed-signal foundry portfolio with 0.35-micron process GERFURT, Germany -- Germany's X-Fab Semiconductor Foundries AG here today expanded its silicon foundry portfolio, announcing a new, 0.35-micron CMOS process technology for digital and mixed-signal applications. The process, dubbed XC035, is a fully qualified and characterized technology that comes with a comprehensive line of design kits. Electronic design automation (EDA) tool support comes from Cadence, Verilog, Vital, Synopsys, according to the Erfurt-based company. Geared for digital and mixed-signal ICs, the 3.3- and 5-Volt process includes options for one or two poly layers and three or four metal layers. Additional process options such as low-voltage and EEPROM are also available, the company said. More analog elements will be gradually added to the new process family over the next two years. Implementation of these elements will enable high-voltage applications, integrated flash-memory options, and radio-frequency (RF) circuits. In addition, a series of new circuit elements are immediately available for 0.6-micron BiCMOS technology (XB06), namely inductors, varactors and poly fuses for one-time programming capability, and varactors for RF circuits. "The introduction of 0.35-micron CMOS Technology is simply a logical and consistent step in the implementation of [our] strategy," said Jens Kosch, chief technology officer and director of technology development and design support for X-Fab.
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