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Peregrine Semiconductor Introduces First RF SOI 300 mm Technology PlatformGLOBALFOUNDRIES and Peregrine Collaborate To Achieve an Industry First with the UltraCMOS® 11 Platform SAN DIEGO – July 6, 2015 – Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the UltraCMOS® 11 platform, the industry’s first RF SOI technology built on GLOBALFOUNDRIES’ 130 nm 300 mm RF technology platform. By moving to a 300 mm wafer, Peregrine opens the door to new enhancements and advanced features in future generations of the UltraCMOS technology platform, which can leverage GLOBALFOUNDRIES’ 300 mm production-proven design enablement and manufacturing expertise and scale. To develop the next-generation UltraCMOS 11 platform, Peregrine collaborated with tier-one fab GLOBALFOUNDRIES. UltraCMOS 11 technology uses a custom fabrication flow from GLOBALFOUNDRIES' state-of-the-art Fab 7 facility in Singapore. Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology—a patented, advanced form of SOI—to deliver the performance edge needed to solve the RF market's biggest challenges, such as linearity. With products that deliver best-in-class performance and monolithic integration, Peregrine is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 180 filed and pending patents and has shipped over 2 billion UltraCMOS units. For more information, visit http://www.psemi.com.
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