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Mosys licenses 1T-SRAM embedded memory technology to National Semiconductor
SUNNYVALE, CALIFORNIA (September, 16, 2002) –MoSys, Inc. (NASDAQ: MOSY) the industry's leading provider of high density SoC embedded memory solutions, today announced the licensing of MoSys' 1T-SRAMÒ embedded memory technology to National Semiconductor . The 1T-SRAM embedded memory technology is an innovative solution that National will use to enable the incorporation of high performance, high density embedded memory blocks into their future cellular baseband SoCs. "The 1T-SRAM embedded memory solution was evaluated according to our requirements. MoSys' technology offers unique performance, density and ultra-low power capabilities not available from other standard SRAM technologies. By using MoSys' 1T-SRAM embedded memory, our customers will benefit from the high density, low power advantages this technology delivers," said Mal Humphrey, director of the cellular solutions product line within National Semiconductor's wireless division. The license agreement will initially be used for products built in the 0.13-micron process generation using MoSys' recently announced 1T-SRAM-R™ technology that incorporates Transparent Error Correction™ (TEC™ ) to eliminate the need for the laser repair manufacturing step while providing improved soft error rate, yield and reliability compared to other embedded memory technologies. "We are excited that an industry frontrunner like National Semiconductor has joined the growing list of companies choosing MoSys'1T-SRAM technology," said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "In leading-edge process geometries, 1T-SRAM can lower standby power and help avoid the increasing bitcell leakage of six transistor memory designs for the very demanding requirements of next generation cellular designs and other mobile products. As the proportion of SoC die area occupied by memory continues to grow these benefits translate to dramatic advantages for the whole SoC – and, consequently, for National's customers."
### Note for Editors: 1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or servicenames referenced in this release may be trademarks or registered trademarks of their respective holders.
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