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Attopsemi's I-fuse OTP Passed 250 degrees Celsius for 1,000hrs Wafer-level Burn-in Studies on GLOBALFOUNDRIES 22FDX FD-SOI TechnologyAttopsemi's I-fuse™ provides small size, high reliability, low program voltage/current, low power and wide temperature to enable GLOBALFOUNDRIES 22nm FDX® for automotive and IoT applications. “Other than the advanced features of small size and low program voltage/current, we showed the world that I-fuse™ can sustain 250°C 1,000hrs and still maintain ultra-high reliability,” said Shine Chung, Chairman of Attopsemi. “I am thankful for GF’s superior CMOS process to demonstrate our I-fuse™ can achieve the performance of great merit,” added by Shine. “We sincerely appreciate all the supports from GF in developing our proprietary I-fuse™ OTP technology on 22FDX®,” said Shine Chung. “After many years of dedicated works and collaboration with foundries and customers worldwide, our I-fuse™ technology has finally been demonstrated at elevated temperature. We have proven that I-fuse™ can ensure high reliability with smaller size by using a fraction of program current. With our superior OTP IP, we expect to bring substantial benefits to all semiconductor communities.” About Attopsemi Technology
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