ACD Licenses MoSys' 1T-SRAM Embedded Memory Technology; 1T-SRAM Memory Technology to be Used in EtherLan Broadband Switch

SUNNYVALE, Calif., Feb 19, 2003 (BUSINESS WIRE) -- MoSys, Inc. (NASDAQ:MOSY) the industry's leading provider of high density SoC embedded memory solutions, today announced the licensing of its 1T-SRAM(R) embedded memory technology to Advanced Communication Devices Corporation (ACD) a wholly owned subsidiary of UTStarcom. ACD will use MoSys' 1T-SRAM embedded memory technology to incorporate high performance, high density embedded memory blocks into its EtherLan broadband switch.

ACD chose MoSys' 1T-SRAM embedded memory technology because it combines area-efficiency with performance in a technology that is production proven and cost-effective. The combination of high-performance and density, which is not available from other SRAM technologies, is best suited for ACD's design requirements.

"MoSys' 1T-SRAM embedded memory technology provides us significant advantages in performance and density over other available technologies that we investigated. By licensing 1T-SRAM embedded memory, we can effectively meet the needs of our customers, and enable companies to now bring innovative system products to market with unprecedented speed and cost-effectiveness," said Johannes Wang, vice president of Technology at ACD.

"We are pleased that ACD has joined the growing list of companies choosing MoSys' 1T-SRAM technologies," said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. "1T-SRAM technology can substantially reduce the memory size and improve yields. As the proportion of SoC die area occupied by memory continues to grow these benefits translate to dramatic advantages for the whole SoC and, consequently, for ACD and its customers."

ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, 1T-SRAM technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

ABOUT UTSTARCOM, INC.
UTStarcom designs, manufactures, sells, and installs an integrated suite of future-ready access network and next-generation switching solutions. The company enables wireless and wireline operators in fast-growth markets worldwide to offer voice, data, and Internet access services rapidly and cost effectively by utilizing existing infrastructure.

UTStarcom's products provide a seamless migration from wireline to wireless, from narrowband to broadband, and from circuit-to-packet-based networks by employing "Next Generation Network Technology Now."

The company's customers include public telecommunications service providers that operate wireless and wireline voice and data networks in rapidly growing communications markets around the world.

Founded in 1991 and headquartered in Alameda, California, the company manufactures the majority of its products at its ISO9002 certified facilities located in China, and maintains sales and customer support sites throughout Mainland China and in Iselin, NJ; Alameda, CA; Miami, FL; Frankfurt, Germany; Mexico City, Mexico; Taipei, Taiwan; Tokyo, Japan; Bangkok, Thailand; Hanoi and Ho Chi Minh City, Vietnam; and New Delhi, India.

Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.