Xyratex Licenses MoSys’ 1T-SRAM Embedded Memory

Data Storage and Network Technology Company Uses 1T-SRAM Memory in Next Generation Products

SUNNYVALE, Calif. and HAVANT, United Kingdom (April 21, 2003) – MoSys, Inc. (NASDAQ: MOSY), the industry's leading provider of high density SoC embedded memory solutions, and Xyratex Technology, Limited, a company specializing in the development and production of storage and network technology, today announced that MoSys will license its 1T-SRAMâ embedded memory technology to Xyratex.

Increased speed, reliability and high performance are crucial to the storage and networking industry and 1T-SRAM memory offers these benefits unmatched by other memory technologies. In addition to these advantages, Xyratex needed a solution that would allow large amounts of memory to be embedded into SoC designs using a standard logic process.  

"MoSys' 1T-SRAM technology enables Xyratex to reduce the component chip count and minimize the silicon area, therefore lowering the product cost," said Tony Palmer, Xyratex's vice president of development for Integrated Systems.  "Our customers expect product innovation.  Xyratex's commitment to staying ahead of the technology race in high-speed integrated systems coupled with our MoSys partnership, will help to ensure our customers benefit from the latest technologies."

"The storage and network technology industry is an important market and we are pleased that Xyratex has chosen our 1T-STAM memory technology for inclusion in its products," said Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. "Our relationship with Xyratex allows MoSys to demonstrate the high performance, density and reliability that our memory technology provides."

ABOUT XYRATEX
Xyratex is a storage and network technology company focused on creating essential building blocks for data storage networks, and technology for enabling high performance digital communication networks and storage devices.

Xyratex is recognized for its strong technology base and commitment to providing a highly responsive customer-focused service, investing significantly in research and development to help customers stay ahead in the technology race. The result is an expanding range of long-term partnerships with many of the most influential companies in the worldwide IT marketplace.

Founded in 1994 in an MBO from IBM, and with headquarters in the UK, the company employs over 600 people with around a third working in R&D. Xyratex has an established global base with R&D and operational facilities in Europe, the United States and South East Asia. More information on Xyratex can be found at http://www.xyratex.com.

ABOUT MOSYS
Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System on Chip (SoC) designs.

MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technologies, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office.  All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.