AVID Electronics Licenses MoSys' 1T-SRAM Embedded Memory; SoC Design Company Uses 1T-SRAM Memory in Consumer Electronic Products

SUNNYVALE, Calif. & HSIN-CHU, Taiwan--(BUSINESS WIRE)--May 17, 2004 -- MoSys, Inc. (Nasdaq:MOSY), the industry's leading provider of high density SoC embedded memory solutions, and AVID Electronics (TSE:6103), a fabless SoC company, today announced that MoSys will license its 1T-SRAM(R) embedded memory technology to AVID Electronics.

Reduced power consumption and high performance are crucial to the consumer electronics industry, and 1T-SRAM memory offers these benefits unmatched by other memory technologies. In addition to these advantages, AVID Electronics needed a solution that would allow large amounts of memory to be embedded into SoC designs using a standard logic process.

"MoSys' 1T-SRAM technology enables AVID Electronics to reduce the component chip count and minimize the silicon area, therefore lowering the product cost," said Dr. Ji-Chien Lee, AVID's senior vice president of the product development center. "Our customers expect product innovation and AVID Electronics is committed to delivering high-performance products. Through our partnership with MoSys, we help to ensure our customers benefit from 1T-SRAM memory technology, including its significant low power advantages."

"The consumer electronics industry is an important market, and we are pleased that AVID Electronics has chosen our 1T-SRAM memory technology for inclusion in its next-generation products," said Mark-Eric Jones, vice president and general manager of Intellectual Property at MoSys. "Our relationship with AVID Electronics allows MoSys to demonstrate the high performance, density and manufacturability our memory technology provides."

About AVID Electronics Corp.

Founded in 1996, AVID Electronics Corporation specializes in mixed-mode SoC (System on a Chip) IC designs. In 2000, AVID released the first CD-DA (Digital Audio) IC, which integrates all necessary functions such as RF amplifiers, ECC (Error Correction Code), anti-shock, micro-controller, Delta-Sigma audio DAC, and headphone amplifier on to a single SoC. To date, Avid has a number of designs wins that are manufactured in many notable audio products. New product introductions and steady growth throughout 2004 and beyond are anticipated -- including the development and launch of SoC ICs for Flash-Memory media and Micro HDD, before the end of this year.

AVID employs nearly one hundred and forty employees including engineering and executive-level graduates from distinguished universities. The company is located in the Hsin-Chu Science-Based Industrial Park, Taiwan, and is listed on the Taiwan OTC (6103). More information is available on AVID's website at http://www.avid.com.tw.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM memory results in the technology achieving much higher density than traditional four or six transistor SRAMs, while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce power consumption by a factor of four compared with traditional SRAM technology, contributing to making it ideal for embedding large memories in System on Chip (SoC) designs. MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory, demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holder.