Foundries News

• Tower and Jazz Semiconductor Announce Deep-Silicon-Via™ Technology for Cellular and WiFi SiGe Power Amplifiers and Front-End Modules (Tuesday Sep. 29, 2009)
  Foundry leader in providing cell phone front-end silicon components enhances its SiGe platform to reduce power consumption and cost of PAs
  
  
• AppliedMicro-TSMC Collaboration Brings Power Architecture Microprocessors to TSMC Technology Platforms (Friday Sep. 25, 2009)
  AMCC and TSMC today announced a collaboration enabling AppliedMicro’s Power Architecture® microprocessors to be manufactured on TSMC’s industry-leading technology platform first at 90nm then moving to 65nm and 40nm soon after.
  
  
• IBM Announces Industry's Densest, Fastest On-Chip Dynamic Memory in 32-Nanometer, Silicon-on-Insulator Technology (Friday Sep. 18, 2009)
  IBM has successfully developed a prototype of the semiconductor industry's smallest, densest and fastest on-chip dynamic memory device in next-generation, 32-nanometer, silicon-on-insulator (SOI) technology that can offer improved speed, power savings and reliability for products ranging from servers to consumer electronics.
  
  
• X-FAB Announces Half-Year Results (Thursday Sep. 17, 2009)
  X-FAB today announced sales of USD 84.4 million (EUR 63.3 million) for the first six months of the current fiscal year. This corresponds to a year-on-year decline of approximately 62.7 percent.
  
  
• TSMC August 2009 Sales Report (Thursday Sep. 10, 2009)
  TSMC today announced its net sales for August 2009: on an unconsolidated basis, net sales were approximately NT$28.89 billion, a decrease of 4.6 percent from July 2009 and a decrease of 6.8 percent from August 2008.
  
  
• ATIC Makes Bid to Acquire Chartered (Monday Sep. 07, 2009)
  Advanced Technology Investment Company LLC (ATIC) of Abu Dhabi and Chartered Semiconductor Manufacturing (Chartered) of Singapore today announced a definitive agreement whereby ATIC would acquire Chartered, one of the world’s top dedicated semiconductor foundries.
  
  
• Chartered Updates Guidance For Third Quarter (Monday Sep. 07, 2009)
  Today, in a mid-quarter update, Chartered Semiconductor revised its third quarter 2009 guidance, which was originally provided on July 24, 2009.
  
  
• Tower Semiconductor Announces Higher Third Quarter Revenue Guidance (Wednesday Sep. 02, 2009)
  Third Quarter Revenue Guidance Calls for 30% Sequential Growth and 34% Year-over-Year Growth, Representing Company Record Revenue
  
  
• TAEJIN Selects Tower Semiconductor's Power Management Process; Choice Helps TAEJIN Target Multi-Billion Dollar Voltage Regulators Market (Monday Aug. 31, 2009)
  TAEJIN today announced it has selected Tower Semiconductor to manufacture its low power, high efficiency voltage regulator ICs. ower was chosen for its advanced power management platform to enable TAEJIN to quickly address the needs of the multi-billion dollar voltage regulators market which, according to iSuppli is expected to grow from $5 billion in 2009 to approximately $7 billion in 2013.
  
  
• Fujitsu Microelectronics and TSMC to Collaborate on 28nm Process Technology (Thursday Aug. 27, 2009)
  Fujitsu Microelectronics and TSMC today announced that they have agreed to collaborate on 28-nanometer (nm) process technology targeted for foundry production of Fujitsu Microelectronics’ 28nm logic ICs and to jointly develop an enhanced 28nm high-performance process technology by utilizing TSMC’s advanced technology platform.
  
  
• SWID Selects Jazz Semiconductor's 0.35-micron SiGe BiCMOS Process and Models; Achieves First-Time Success for Digital Satellite Tuner (Thursday Aug. 27, 2009)
  Jazz Semiconductor , a Tower Group Company (NASDAQ: TSEM, TASE: TSEM), today announced that Southwest Integrated Circuit Design (SWID), a fabless IC design company, selected its 0.35-micron SiGe BiCMOS process (SBC35) and models to develop their satellite tuner LW10039, a fully integrated RF tuner for DVB-S digital satellite receiver systems.
  
  
• TSMC Achieves 28nm SRAM Yield Breakthrough (Monday Aug. 24, 2009)
  TSMC has become the first foundry not only to achieve 28nm functional 64Mb SRAM yield, but also to achieve it across all three 28nm nodes.
  
  
• TSMC Adds High-K Metal Gate Low Power Process to 28nm Road Map (Monday Aug. 24, 2009)
  TSMC today announced that it is adding a low power process to its 28nm high-k metal gate (HKMG) road map. The new process is expected to enter risk production in the third quarter of 2010.
  
  
• Tower and Jazz Semiconductor Join Forces with SVTC to Expand MEMS Aerospace and Defense Customer BaseTower and Jazz Semiconductor Join Forces with SVTC to Expand MEMS Aerospace and Defense Customer Base (Thursday Aug. 20, 2009)
  Tower Semiconductor, and its fully owned U.S. subsidiary Jazz Semiconductor, today announced they have signed a Memorandum of Understanding (MOU) with SVTC Technologies that will expand Tower and Jazz’s Aerospace and Defense (A&D) MEMS customer base while providing SVTC’s A&D customers with access to select Jazz technology and U.S. manufacturing facilities.
  
  
• Jazz Semiconductor's Optimized SiGe Technology Targeted at Replacing GaAs Components in Growing Millimeter Wave and Cell Phone Markets (Tuesday Aug. 18, 2009)
  Jazz Semiconductor today announced it is targeted at replacing GaAs components in high growth markets such as millimeter wave and front-end components of cellular phones with its enhanced SiGe BiCMOS process, IP and design enablement offerings.
  
  
• Intersil Signs MOU with Tower Semiconductor for Co-Development and Manufacturing of Next-Generation Power Management Platform (Thursday Aug. 13, 2009)
  Intersil and Tower today announced they will work together to develop a new high-performance power management specialty process technology platform.
  
  
• Tower Semiconductor Reports Second Quarter 2009 Financial Results (Wednesday Aug. 12, 2009)
  Tower today announced financial results for the second quarter ended June 30, 2009. Third Quarter Revenue Guidance Calls for 24 Percent Sequential Growth and 28 Percent Year-over-Year Growth
  
  
• TSMC July 2009 Sales Report (Monday Aug. 10, 2009)
  TSMC today announced its net sales for July 2009: on an unconsolidated basis, net sales were approximately NT$30.28 billion, an increase of 17.5 percent over June 2009 and a decrease of 1.9 percent from July 2008.
  
  
• IDT and TSMC Enter Product Fabrication Agreement (Friday Aug. 07, 2009)
  IDT to Move from Fab-lite to Fab-less Model by Transferring Internal Fabrication Processes to TSMC
  
  
• Dongwoon Anatech Selects Tower Semiconductor as Sole Manufacturing Partner for High Volume LED Lighting Devices (Wednesday Aug. 05, 2009)
  Dongwoon Anatech today announced it has selected Tower Semiconductor as its sole manufacturing partner for high volume, energy saving LED lighting devices used in both home and industrial applications.
  
  
• Medigus and Tower Semiconductor Announce World's Smallest Medical Video Camera Based on Advanced CMOS Image Sensor (Monday Aug. 03, 2009)
  Medigus and Tower Semiconductor today announced successful sampling of a new CMOS imager that will serve in Medigus' line of disposable miniature cameras and its new medical devices camera; the smallest of its kind in the world, designated to be incorporated into disposable endoscopes or used in various diagnostic and surgical medical applications.
  
  
• TSMC Reports Second Quarter EPS of NT$0.94 (Thursday Jul. 30, 2009)
  TSMC today announced consolidated revenue of NT$74.21 billion, net income of NT$24.44 billion for the second quarter ended June 30, 2009.
  
  
• GLOBALFOUNDRIES Announces Strategic Customer Engagement with STMicroelectronics (Wednesday Jul. 29, 2009)
  GLOBALFOUNDRIES today announced a strategic customer relationship with STMicroelectronics. ST will partner with GLOBALFOUNDRIES to produce products based on 40nm Low Power (LP) bulk silicon technology.
  
  
• MOSIS Marks Expanded Semiconductor Foundry Offerings With Shuttle Runs for Silicon-On-Insulator (SOI) (Wednesday Jul. 29, 2009)
  The MOSIS Service today announced that it has expanded its relationship with IBM to now include silicon-on-insulator (SOI) technology at multiple advanced lithography nodes. MOSIS is offering IBM's 45-nm SOI technology on 300mm wafers and IBM's 180-nm SOI technology on 200mm wafers.
  
  
• austriamicrosystems to manufacture Triad Semiconductor's Via-Configurable SoC Solution (Tuesday Jul. 28, 2009)
  Triad selects austriamicrosystems advanced analog specialty 0.35µm CMOS embedded EEPROM process for its Via-Configurable Arrays (VCA) containing an advanced 32-bit processor
  
  
• SMIC 130nm Process Used in Commercial Production of DisplayLink USB Graphics Chips (Monday Jul. 27, 2009)
  SMIC today announced the successful commercial production of a 130nm family of DisplayLink USB graphics chips designed by DisplayLink and manufactured at SMIC.
  
  
• Grace announces a new cost-effective platform of 0.18um OTP for speech IC and micro controller (Friday Jul. 24, 2009)
  Grace Semiconductor Manufacturing Corporation (Grace), one of the leading semiconductor foundries in differentiated technologies, announced the availability of its 0.18um cost effective OTP (One Time Programmable) process platform.
  
  
• TSMC Extends Design Methodology Leadership to 28nm with Reference Flow 10.0 (Wednesday Jul. 22, 2009)
  Reference Flow 10.0 is one of the key collaborative components of the Open Innovation Platform™. The newest generation of the company’s reference flow addresses new design challenges of 28nm process technology and delivers innovations to enable System-in-Package (SiP) design.
  
  
• TSMC Launches Unified Physical Verification Format for Advanced Process Technologies (Tuesday Jul. 21, 2009)
  TSMC today unveiled interoperable design rule check (iDRC) and layout-versus-schematic (iLVS), two unified electronic design automation (EDA) data formats, for TSMC 40 nanometer (nm) process technology.
  
  
• Chartered Begins Production Ramp of Enhanced 65nm Low-Power Process; Improves Power Utilization by 30-50 Percent (Thursday Jul. 16, 2009)
  Chartered today announced the general availability of an enhanced version of its 65-nanometer (nm) low-power (LP) process, called 65nm LPe. The process is also supported by a robust range of IP specifically optimized for the lower leakage capabilities.