Industry Expert Blogs
Always-On IoT - FDSOI's Always Better? What About Wafers? (Questions from Shanghai)SemiWiki - Adele HarsNov. 03, 2016 |
Mahesh Tirupattur, EVP at low-power SERDES pioneer Analog Bits lead off the panel discussion at the recent FD-SOI Forum in Shanghai with the assertion that for anything “always on” in IoT, FD-SOI’s always better. They had a great experience porting their SERDES IP to 28nm FD-SOI (which they detailed last spring – see the ppt here). The port from 28 bulk to 28 FDSOI took 2 1/2 months (vs. to FinFET, which took almost 6). Even without using body bias, they got performance up by around 15% and leakage down by about 30% (he added that with body bias, they could get five times that).
He compared porting to FD-SOI to playing high school ball, vs. a port to FinFET which is like competing in the Olympics. ESD was different, but not a big deal – you just need to “read the manual”. Heating? Nothing an engineer can’t resolve. For IoT, FinFETs are like using a cannon to shoot a mosquito, he quipped.
Related Blogs
- Moortec "Let's Talk PVT Monitoring" Series with CTO Oliver King
- Intel Embraces the RISC-V Ecosystem: Implications as the Other Shoe Drops
- What's Behind The Power Savings
- Let's Talk PVT Monitoring: Thermal Issues Associated with Modern SoCs - How Hot is Hot?
- Experts Talk: RISC-V CEO Calista Redmond and Maven Silicon CEO Sivakumar P R on RISC-V Open Era of Computing