Intel to Spend $5 Billion on 10nm Fab in Israel
Nitin Dahad, EETimes
5/24/2018 00:01 AM EDT
LONDON — Intel Corporation plans to invest $5 billion over the next two years to upgrade its fab in Kiryat Gat in Israel from 22nm to 10nm technology.
There was no official announcement from Intel, but Israel’s ministry of finance said in a statement that approval is expected from Israel’s government bodies in weeks and that the new plant will employ an additional 250 people. Intel had apparently considered several possible expansion sites but, after two years of discussion with Israel’s finance ministry, decided to expand its site in the country.
E-mail This Article | Printer-Friendly Page |
|
Related News
- Intel Supports American Innovation with $7 Billion Investment in Next-Generation Semiconductor Factory in Arizona
- Samsung to spend $1.9 billion on logic fab, says report
- Global Semiconductor Industry Plans to Invest $400 Billion in 300mm Fab Equipment Over Next Three Years, SEMI Reports
- TSMC Arizona and U.S. Department of Commerce Announce up to US$6.6 Billion in Proposed CHIPS Act Direct Funding, the Company Plans Third Leading-Edge Fab in Phoenix
- 300mm Fab Equipment Spending Forecast to Reach Record $137 Billion in 2027, SEMI Reports
Breaking News
- Ubitium Debuts First Universal RISC-V Processor to Enable AI at No Additional Cost, as It Raises $3.7M
- TSMC drives A16, 3D process technology
- Frontgrade Gaisler Unveils GR716B, a New Standard in Space-Grade Microcontrollers
- Blueshift Memory launches BlueFive processor, accelerating computation by up to 50 times and saving up to 65% energy
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
Most Popular
- Cadence Unveils Arm-Based System Chiplet
- CXL Fabless Startup Panmnesia Secures Over $60M in Series A Funding, Aiming to Lead the CXL Switch Silicon Chip and CXL IP
- Esperanto Technologies and NEC Cooperate on Initiative to Advance Next Generation RISC-V Chips and Software Solutions for HPC
- Eliyan Ports Industry's Highest Performing PHY to Samsung Foundry SF4X Process Node, Achieving up to 40 Gbps Bandwidth at Unprecedented Power Levels with UCIe-Compliant Chiplet Interconnect Technology
- Arteris Selected by GigaDevice for Development in Next-Generation Automotive SoC With Enhanced FuSa Standards